Product Specification www.jmnic.com 2SC2591 2SC2592 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1111/1112 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SC2591 VCBO Collector-base voltage 150 Open base 2SC2592 VEBO Emitter-base voltage V 180 2SC2591 Collector-emitter voltage UNIT 150 Open emitter 2SC2592 VCEO VALUE V 180 Open collector 5 V 1 A 1.5 A 20 W IC Collector current ICM Collector current-peak PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SC2591 2SC2592 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO PARAMETER CONDITIONS 2SC2591 Base-emitter breakdown voltage MIN TYP. MAX UNIT 150 IC=0.1mA ,IB=0 2SC2592 V 180 VEBO Emitter-base breakdown voltage IE=10μA ,IC=0 VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 0.5 2.0 V VBEsat Base-emitter saturation voltage IC=0.5A; IB=50mA 1.0 2.0 V ICBO Collector cut-off current VCB=120V; IE=0 1 μA IEBO Emitter cut-off current VEB=4V; IC=0 1 μA hFE-1 DC current gain IC=150mA ; VCE=10V 90 hFE-2 DC current gain IC=500mA ; VCE=5V 50 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 20 pF fT Transition frequency IC=50mA ; VCE=10V 200 MHz hFE-1 Classifications Q R S 90-155 130-220 185-330 JMnic 5 V 330 Product Specification www.jmnic.com 2SC2591 2SC2592 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) JMnic