JMNIC 2SC2591

Product Specification
www.jmnic.com
2SC2591 2SC2592
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SA1111/1112
・Good linearity of hFE
・High VCEO
APPLICATIONS
・For audio frequency, high power
amplifiers application
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC2591
VCBO
Collector-base voltage
150
Open base
2SC2592
VEBO
Emitter-base voltage
V
180
2SC2591
Collector-emitter voltage
UNIT
150
Open emitter
2SC2592
VCEO
VALUE
V
180
Open collector
5
V
1
A
1.5
A
20
W
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SC2591 2SC2592
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO
PARAMETER
CONDITIONS
2SC2591
Base-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
150
IC=0.1mA ,IB=0
2SC2592
V
180
VEBO
Emitter-base breakdown voltage
IE=10μA ,IC=0
VCEsat
Collector-emitter saturation voltage
IC=0.5A; IB=50mA
0.5
2.0
V
VBEsat
Base-emitter saturation voltage
IC=0.5A; IB=50mA
1.0
2.0
V
ICBO
Collector cut-off current
VCB=120V; IE=0
1
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1
μA
hFE-1
DC current gain
IC=150mA ; VCE=10V
90
hFE-2
DC current gain
IC=500mA ; VCE=5V
50
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
20
pF
fT
Transition frequency
IC=50mA ; VCE=10V
200
MHz
hFE-1 Classifications
Q
R
S
90-155
130-220
185-330
JMnic
5
V
330
Product Specification
www.jmnic.com
2SC2591 2SC2592
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
JMnic