Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SA1022 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High transition frequency fT. 0.4 3 Features 1 insertion through the tape packing and the magazine packing. 0.55 Mini type package,allowing downsizing of the equipment and automatic 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage (Emitter open) Parameter VCBO -30 V Collector-emitter voltage (Base open) VCEO -20 V Emitter-base voltage (Collector open) VEBO -5 V Collector current IC -30 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Testconditons Min Max Unit ICBO VCB = -10 V, IE = 0 -0.1 ìA ICEO VCE = -20 V, IB = 0 -100 ìA IEBO VEB = -5.0 V, IC = 0 -10 ìA hFE VCE = -10 V, IC = -1 mA 70 VCE(sat) IC = -10 mA, IB = -1 mA Base to emitter voltage Typ VBE VCE =-10 V, IC = -1 mA 220 -0.1 V -0.7 V Transition frequency fT VCB = -10 V, IE = 1 mA f = 200 MHz 300 MHz Noise figure NF VCB = -10 V, IE = 1 mA f = 5 MHz 2.8 dB Reverse transfer impedance Zrb VCB = -10 V, IE = 1 mA f = 2 MHz 22 Ù Common emitter reverse transfer capacitance Cre VCE = -10 V, Ic = -1 mA f = 10.7 MHz 1.2 pF 150 hFE Classification Marking EB EC hFE 70 140 110 220 www.kexin.com.cn 1