KEXIN 2SA1022

Transistors
IC
SMD Type
Silicon PNP Epitaxial Planar Type
2SA1022
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
High transition frequency fT.
0.4
3
Features
1
insertion through the tape packing and the magazine packing.
0.55
Mini type package,allowing downsizing of the equipment and automatic
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
Parameter
VCBO
-30
V
Collector-emitter voltage (Base open)
VCEO
-20
V
Emitter-base voltage (Collector open)
VEBO
-5
V
Collector current
IC
-30
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Testconditons
Min
Max
Unit
ICBO
VCB = -10 V, IE = 0
-0.1
ìA
ICEO
VCE = -20 V, IB = 0
-100
ìA
IEBO
VEB = -5.0 V, IC = 0
-10
ìA
hFE
VCE = -10 V, IC = -1 mA
70
VCE(sat) IC = -10 mA, IB = -1 mA
Base to emitter voltage
Typ
VBE
VCE =-10 V, IC = -1 mA
220
-0.1
V
-0.7
V
Transition frequency
fT
VCB = -10 V, IE = 1 mA f = 200 MHz
300
MHz
Noise figure
NF
VCB = -10 V, IE = 1 mA f = 5 MHz
2.8
dB
Reverse transfer impedance
Zrb
VCB = -10 V, IE = 1 mA f = 2 MHz
22
Ù
Common emitter reverse transfer capacitance
Cre
VCE = -10 V, Ic = -1 mA f = 10.7 MHz
1.2
pF
150
hFE Classification
Marking
EB
EC
hFE
70 140
110 220
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