KEXIN 2SB1122

Transistors
SMD Type
PNP Epitaxial Planar Silicon Transistors
2SB1122
Features
Adoption of FBET process..
Very small size making it easy to provide highdensity
hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1
A
Collector current (pulse)
ICP
-2
A
Collector dissipation
PC
500
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SB1122
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -50V , IE = 0
-100
nA
Emitter cutoff current
IEBO
VCB = -4V , IE = 0
-100
nA
DC current Gain
hFE
VCE = -2V , IC = -100mA
fT
VCE = -10V , IC = -50mA
150
MHz
VCB = -10V , f = 1MHz
12
pF
Gain bandwidth product
Output capacitance
Cob
Testconditons
Typ
100
560
Collector-emitter saturation voltage
VCE(sat) IC = -500mA , IB = -50mA
-180
-500
V
Base-emitter saturation voltage
VBE(sat) IC = -500mA , IB = -50mA
-0.9
-1.2
V
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-5
V
Turn-on time
ton
40
ns
Storage time
tstg
300
ns
tf
30
ns
Fall time
hFE Classification
BE
Marking
Rank
hFE
2
Min
R
100
S
200
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140
T
280
200
U
400
280
560