Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1122 Features Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -1 A Collector current (pulse) ICP -2 A Collector dissipation PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SB1122 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -50V , IE = 0 -100 nA Emitter cutoff current IEBO VCB = -4V , IE = 0 -100 nA DC current Gain hFE VCE = -2V , IC = -100mA fT VCE = -10V , IC = -50mA 150 MHz VCB = -10V , f = 1MHz 12 pF Gain bandwidth product Output capacitance Cob Testconditons Typ 100 560 Collector-emitter saturation voltage VCE(sat) IC = -500mA , IB = -50mA -180 -500 V Base-emitter saturation voltage VBE(sat) IC = -500mA , IB = -50mA -0.9 -1.2 V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -50 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 V Turn-on time ton 40 ns Storage time tstg 300 ns tf 30 ns Fall time hFE Classification BE Marking Rank hFE 2 Min R 100 S 200 www.kexin.com.cn 140 T 280 200 U 400 280 560