Transistors IC SMD Type PNP Silicon Epitaxia 2SA1463 Features High speed,high voltage switching. Low Collector Saturation Voltage Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -60 V Collecto to emitter voltage VCEO -45 V Emitter to base voltage VEBO -5.0 V Collector current(DC) IC -1.0 A Collector current(Pulse)* IC -2.0 A W Total power dissipation PT 20 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *.pw 10 ms,Duty Cycle 50% Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICES VCE = -45V, RBE=0 -0.5 ìA Emitter cutoff current IEBO VEB = -4V, IC=0 -0.5 ìA hFE1 VCE = -10V , IC = -50mA 60 hFE2 VCE = -10V , IC = -500mA 60 DC current gain * Testconditons Collector-emitter saturation voltage * VCE(sat) IC = -500mA , IB = -50mA Base-emitter saturation voltage * VBE(sat) IC = -500mA , IB = -50mA Gain bandwidth product fT Output capacitance Cob Turn-on time ton Storage time tstg Turn-off time toff * Pulse test: tp 350 ìs; d VCE = -10V , IE = 100mA VCB = -10V , IE = 0 , f = 1.0MHz IC = -500mA , IB1 = IB1 = -50mA Min 300 Typ 200 -0.26 -0.6 -0.98 -1.2 400 V V MHz 11 25 pF 25 40 ns 46 70 ns 62 100 ns 0.02. hFE Classification Marking 1L hFE 60 120 1K 100 200 www.kexin.com.cn 1