Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SD1048 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Large current capacity (IC=0.7A) and low-saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Ultrasmall package allows miniaturization in end products. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 0.7 A Collector current (pulse) ICP 1.5 A Collector dissipation PC 200 mW Jumction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol IcBO VCB = 15V , IE = 0 0.1 ìA Emitter cutoff current IEBO VEB = 4V , IC = 0 0.1 ìA DC current Gain hFE VCE = 2V , IC = 50mA fT VCE = 10V , IC = 50mA 250 MHz Cob VCB = 10V , f = 1MHz 8 pF Gain bandwidth product Output capacitance Collector-emitter saturation voltage Testconditons Min Typ 200 900 VCE(sat) IC = 5mA , IB = 0.5mA 10 25 mV VCE(sat) IC = 100mA , IB = 10mA 30 80 mV hFE Classification Marking hFE X6 200 400 X7 300 600 X8 450 900 www.kexin.com.cn 1