KEXIN KI5935DC

IC
IC
SMD Type
Dual P-Channel 1.8-V (G-S) MOSFET
KI5935DC
Features
TrenchFET Power MOSFETS
Low rDS(on) Dual and Excellent Power
Handling In A Compact Footprint
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150
)*
TA = 25
ID
TA = 85
Pulsed Drain Current
Continuous Source Current *
Maximum Power Dissipation *
IS
TA = 25
PD
TA = 85
Operating Junction and Storage Temperature Range
-3.0
-2.9
-2.2
-15
-1.8
-0.9
2.1
1.1
1.1
0.6
Symbol
5 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
W
260
Parameter
Maximum Junction-to-Ambienta
A
-55 to 150
TJ, Tstg
Soldering Recommendations (Peak Temperature)
t
V
-4.1
IDM
Unit
Steady-State
RthJF
Typ
Max
50
60
90
110
30
40
Unit
/W
* Surface Mounted on 1" X 1' FR4 Board.
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1
IC
IC
SMD Type
KI5935DC
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
Min
VDS = 0 V, VGS =
Typ
-0.4
8V
Max
Unit
1.0
V
100
nA
VDS = -16V, VGS = 0 V
-1
A
VDS = -16V, VGS = 0 V, TJ = 85
-5
A
-15
A
On-State Drain Current*
ID(on)
VDS
VGS = -4.5 V, ID = -3A
0.069
0.086
Drain-Source On-State Resistance*
rDS(on)
VGS = -2.5 V, ID = -2.5A
0.097
0.121
VGS = -1.8 V, ID = -0.6A
0.137
0.171
- 5 V, VGS = -4.5 V
Forward Transconductance*
gfs
VDS = -10 V, ID = -3A
8
Schottky Diode Forward Voltage*
VSD
IS = -0.9 A, VGS = 0 V
-0.8
-1.2
V
Total Gate Charge
Qg
5.5
8.5
nC
Gate-Source Charge
Qgs
0.91
nC
Qgd
1.6
nC
Turn-On Delay Time
td(on)
18
30
ns
tr
VDD = -10 V, RL = 10
32
50
ns
ID = -1 A, VGEN = -4.5V, RG = 6
42
65
ns
Turn-Off Delay Time
td(off)
VDS = -10V, VGS = -4.5 V, ID = -3 A
S
Gate-Drain Charge
Rise Time
Fall Time
tf
26
40
ns
Source-Drain Reverse Recovery Time
trr
30
60
ns
* Pulse test; pulse width
2
Testconditons
VDS = VGS, ID = -250 A
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300 s, duty cycle
2%.
IF = -0.9 A, di/dt = 100 A/
s