IC IC SMD Type Dual P-Channel 1.8-V (G-S) MOSFET KI5935DC Features TrenchFET Power MOSFETS Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 85 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * IS TA = 25 PD TA = 85 Operating Junction and Storage Temperature Range -3.0 -2.9 -2.2 -15 -1.8 -0.9 2.1 1.1 1.1 0.6 Symbol 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) W 260 Parameter Maximum Junction-to-Ambienta A -55 to 150 TJ, Tstg Soldering Recommendations (Peak Temperature) t V -4.1 IDM Unit Steady-State RthJF Typ Max 50 60 90 110 30 40 Unit /W * Surface Mounted on 1" X 1' FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI5935DC Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS Min VDS = 0 V, VGS = Typ -0.4 8V Max Unit 1.0 V 100 nA VDS = -16V, VGS = 0 V -1 A VDS = -16V, VGS = 0 V, TJ = 85 -5 A -15 A On-State Drain Current* ID(on) VDS VGS = -4.5 V, ID = -3A 0.069 0.086 Drain-Source On-State Resistance* rDS(on) VGS = -2.5 V, ID = -2.5A 0.097 0.121 VGS = -1.8 V, ID = -0.6A 0.137 0.171 - 5 V, VGS = -4.5 V Forward Transconductance* gfs VDS = -10 V, ID = -3A 8 Schottky Diode Forward Voltage* VSD IS = -0.9 A, VGS = 0 V -0.8 -1.2 V Total Gate Charge Qg 5.5 8.5 nC Gate-Source Charge Qgs 0.91 nC Qgd 1.6 nC Turn-On Delay Time td(on) 18 30 ns tr VDD = -10 V, RL = 10 32 50 ns ID = -1 A, VGEN = -4.5V, RG = 6 42 65 ns Turn-Off Delay Time td(off) VDS = -10V, VGS = -4.5 V, ID = -3 A S Gate-Drain Charge Rise Time Fall Time tf 26 40 ns Source-Drain Reverse Recovery Time trr 30 60 ns * Pulse test; pulse width 2 Testconditons VDS = VGS, ID = -250 A www.kexin.com.cn 300 s, duty cycle 2%. IF = -0.9 A, di/dt = 100 A/ s