TYSEMI KUK7604-40A

Transistors
IC
SMD Type
Product specification
KUK7604-40A
1 .2 7 -0+ 0.1.1
TO-263
Features
TrenchMOSTM technology
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
Standard level compatible.
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
rated
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
175
5 .6 0
Q101 compliant
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
40
V
drain-gate voltage (DC) RGS = 20 kÙ
VDGR
40
V
gate-source voltage (DC)
VGS
drain-source voltage (DC)
drain current (DC) Tmb = 25 ; VGS = 10 V
ID
drain current (DC) Tmb = 100 ; VGS = 10 V
20
V
198
A
75
A
peak drain current *1
IDM
794
A
total power dissipation Tmb = 25
Ptot
300
W
storage temperature
Tstg
-55 to 175
operating junction temperature
Tj
-55 to 175
reverse drain current (DC) Tmb = 25
IDR
198
A
75
A
pulsed reverse drain current *2
IDRM
794
A
non-repetitive avalanche energy
W DSS
1.6
J
thermal resistance from junction to ambient
Rth(j-a)
50
K/W
thermal resistance from junction to mounting base
Rth(j-mb)
0.5
K/W
*1 Tmb = 25 ; pulsed; tp
10 ìs;
*2 unclamped inductive load; ID =75 A;VDS
http://www.twtysemi.com
40 V; VGS = 10 V; RGS = 50Ù,starting Tmb= 25
[email protected]
4008-318-123
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Transistors
IC
SMD Type
Product specification
KUK7604-40A
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Symbol
V(BR)DSS
VGS(th)
Testconditons
Min
Typ
IDSS
V
ID = 0.25 mA; VGS = 0 V;Tj = -55
36
V
ID = 1 mA; VDS = VGS;Tj = 25
2
ID = 1 mA; VDS = VGS;Tj = 175
1
3
0.05
VDS = 40 V; VGS = 0 V;Tj = 25
drain-source on-state resistance
IGSS
RDSon
VGS =
20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;Tj = 25
Qg(tot)
gate-to-source charge
Qgs
gate-to-drain (Miller) charge
Qgd
input capacitance
Ciss
output capacitance
Coss
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain (diode forward) voltage
VGS = 10 V; VDD = 32 V;ID = 25 A
V
4.4
V
10
mA
500
mA
2
100
nA
3.9
4.5
mÙ
8.5
mÙ
VGS = 10 V; ID = 25 A;Tj = 175
total gate charge
4
V
VDS = 40 V; VGS = 0 V;Tj = 175
gate-source leakage current
Unit
ID = 0.25 mA; VGS = 0 V;Tj = 25
ID = 1 mA; VDS = VGS;Tj = -55
drain-source leakage current
Max
40
117
nC
19
nC
50
nC
4300
5730
pF
1400
1680
pF
Crss
800
1100
pF
td(on)
33
ns
110
ns
151
ns
tr
VGS = 0 V; VDS = 25 V;f = 1 MHz
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù
td(off)
tf
Ld
Ls
VSD
from drain lead 6 mm from package to centre of die
76
ns
4.5
nH
2.5
nH
from source lead to source bond pad
7.5
IS = 40 A; VGS = 0 V;
0.85
nH
1.2
V
reverse recovery time
trr
IS = 20 A;dIS/dt = -100 A/ìs
96
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
224
nC
http://www.twtysemi.com
[email protected]
4008-318-123
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