S T S 4622 S amHop Microelectronics C orp. J un, 06 2006 Dual N-Channel Enhancement Mode Field Effect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m : ) Max R ugged and reliable. 65 @ V G S = 10V 40V S OT-26 package. 3A 85 @ V G S =4.5V G1 S2 G2 1 2 3 6 5 4 D2 D1 S OT26 Top View D1 S1 D2 G2 G1 S2 S1 AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) S ymbol Limit Unit Drain-S ource Voltage V DS 40 V Gate-S ource Voltage V GS 20 V P arameter Drain C urrent-C ontinuous @ T J =25 C b -P ulsed ID 3 A IDM 12 A Drain-S ource Diode Forward C urrent IS 1.25 A Maximum P ower Dissipation a PD 1.25 W T J , T S TG -55 to 150 C Operating Junction and S torage Temperature R ange THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 1 100 C /W S T S 4622 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V Gate-Body Leakage IGS S V GS = 20V, V DS = 0V Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) Min Typ C Max Unit OFF CHAR ACTE R IS TICS 40 V 1 uA 100 nA 1.8 3 V V GS = 10V, ID = 3A 53 65 m-ohm V GS = 4.5V, ID = 2A 66 85 m-ohm ON CHAR ACTE R IS TICS b ID(ON) gFS On-S tate Drain Current Forward Transconductance V DS = 5V, V GS = 4.5V V DS = 5V, ID =3A 1 10 A 7 S 330 PF 50 PF 28 PF 7.9 ns 4.6 ns 17 ns 9.3 ns 6.7 nC 0.9 nC 1.6 nC DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time V DS =20V, V GS = 0V f =1.0MH Z c tD(ON) tr Turn-Off Delay Time tD(OFF) Fall Time Total Gate Charge tf Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 20V, ID = 1A, V GS = 10V, R L = 20 ohm R GE N = 6 ohm V DS =20V, ID = 3A, V GS =10V 2 S T S 4622 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 0.82 V GS = 0V, Is =1.25A VSD 1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 10 10 8 V G S =3.5V 8 V G S =4.5V I D , Drain C urrent (A) ID , D rain C urrent(A) V G S =10V 6 4 V G S =3V 2 V G S =2.5V 0 0.5 1.5 1 2 2.5 6 T j=125 C 4 25 C 2 -55 C 0 0.0 0 3 V DS , Drain-to-S ource Voltage (V ) 100 1.4 R DS (ON) , On-R es is tance Normalized 1.5 V G S =4.5V 60 V G S =10V 40 20 0 0 2 4 6 8 1.4 2.1 2.8 3.5 4.2 F igure 2. Trans fer C haracteris tics 120 80 0.7 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (on) (m :) 5 C Min Typ Max Unit Condition S ymbol V G S =10V I D =3A 1.3 1.2 V G S =4.5V I D =2A 1.1 1.0 0 10 0 25 50 75 100 150 125 T j( C ) I D , Drain C urrent (A) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Temperature 3 V 1.3 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage S T S 4622 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 1.3 I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 120 20 I D =3A Is , S ource-drain current (A) R DS (on) (m :) 100 125 C 80 60 75 C 25 C 40 20 0 0 2 4 6 8 10 75 C 125 C 25 C 1 10 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T S 4622 V G S , G ate to S ource V oltage (V ) C , C apacitance (pF ) 500 400 C is s 300 200 100 C os s C rs s 0 0 5 10 15 20 25 30 10 V DS =20V I D =3A 8 6 4 2 0 0 V DS , Drain-to S ource Voltage (V ) 1 3 4 5 6 7 8 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 100 50 I D , Drain C urrent (A) S witching T ime (ns ) 2 T D (off) Tr T D (o n) Tf 10 V DS =20V ,I D=1A 1 10 R 60 100 300 600 10 10 1s 0.1 0m ms s V G S =10V S ingle P ulse T c=25 C 0.1 R g, G ate R es is tance ( :) it DC 0.03 6 10 ( L im 11 V G S =10V 1 DS ) ON 1 10 20 50 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics 5 S T S 4622 V DD ton 5 V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL INVE R TE D 10% 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 14. S witching Waveforms F igure 13. S witching T es t C ircuit Normalized Transient Thermal Resistance 10 1 0.5 0.2 P DM 0.1 0.1 t1 t2 0.05 0.02 1. 2. 3. 4. Single Pulse 0.01 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 10 100 1000 S T S 4622 P AC K AG E OUT LINE DIME NS IONS S OT 26 7 S T S 4622 SOT 26 Tape and Reel Data SOT 26 Carrier Tape +0.10 О1.50 0.00 3.50 + 0.05 4.00 + 0.10 1.75 + 0.10 2.00 + 0.05 8.0 + 0.30 A B B A 5 M ax 0.25 + 0.05 +0.10 О1.00 0.00 R0 4.00 + 0.10 3.3 + 0.1 .3 R0 .3 5 Bo 3.2 + 0.1 R0 . 3 SECTION B-B Ko 1.5 + 0.1 SECTION A-A SOT 26 Reel О60 + 0.5 О178.0 + 0.5 1.50 10.6 2.2 + 0.5 9.0 О13.5 + 0.5 SCALE 2:1 SOT 26 8 R0 .3 +1.5 -0 M ax