SAMHOP STS2306

S T S 2306
S amHop Microelectronics C orp.
Apr,21 2005 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m Ω ) Max
R ugged and reliable.
45 @ V G S = 4.5V
20V
S OT-23 package.
2.8A
60 @ V G S =2.5V
D
S OT-23
D
G
S
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
P arameter
Limit
Unit
Drain-S ource Voltage
V DS
20
V
Gate-S ource Voltage
V GS
8
V
Drain C urrent-C ontinuous a @ T J =125 C
b
-P ulsed
ID
2.8
A
IDM
12
A
Drain-S ource Diode Forward C urrent a
IS
1.25
A
Maximum P ower Dissipation a
PD
1.25
W
T J , T S TG
-55 to 150
Operating Junction and S torage
Temperature R ange
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
R thJA
1
100
C /W
S T S 2306
E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 16V, V GS = 0V
1
Gate-Body Leakage
IGS S
V GS = 8V,V DS = 0V
100 nA
OFF CHAR ACTE R IS TICS
20
V
uA
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage
V GS (th)
Drain-S ource On-S tate R esistance
R DS (ON)
gFS
Forward Transconductance
0.8
1.5
V GS = 4.5V, ID = 2.8A
33
45
V GS = 2.5V, ID = 2.0A
52
60
V DS = 7V, ID = 5A
5
S
608
PF
114
PF
86
PF
10
ns
14
ns
39
ns
26
ns
9.2
nC
1.6
nC
2.6
nC
V DS = V GS , ID = 250uA
0.5
V
m ohm
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =10V, V GS = 0V
f =1.0MH Z
CRSS
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 10V,
ID = 1A,
V GE N = 4.5V,
R L = 10 ohm
R GE N = 10 ohm
V DS =10V, ID = 1A,
V GS =4.5V
2
S T S 2306
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
V GS = 0V, Is =1.25A
VSD
0.84 1.3
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
10
20
I D , Drain C urrent (A)
ID , Drain C urrent(A)
8
V G S =10,9,8,7,6,5,4V
6
V G S =2V
4
2
0
0
1
2
3
4
5
-55 C
15
10
5
0
0.0
6
V DS , Drain-to-S ource Voltage (V )
880
C is s
440
220
C os s
C rs s
0
5
10
15
20
25
1
1.5
2
2.5
3
F igure 2. Trans fer C haracteris tics
R DS (ON) , On-R es is tance(Ohms )
1100
660
0.5
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
0
25 C
T j=125 C
V G S =3V
C , C apacitance (pF )
5
C
Min Typ Max Unit
Condition
S ymbol
30
2.2
V G S =4V
I D =3A
1.8
1.4
1.0
0.6
0.2
0
-50
-25
0
25
50
75
100 125
T j( C )
V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
1.3
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
S T S 2306
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20
10
Is , S ource-drain current (A)
15
12
9
6
3
V DS =7V
0
0
5
10
15
20
1
T J =25 C
0
0.6
25
0.8
1.0
1.2
1.4
1.6
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
5
V DS =10V
I D =1A
4
I D , Drain C urrent (A)
gF S , T rans conductance (S )
I D =250uA
1.10
T j, J unction T emperature ( C )
18
V G S , G ate to S ource V oltage (V )
1.15
3
2
1
0
0
2
4
6
8
10
12 14
10
RD
im
it
10
1s
0.1
10
0m
ms
s
DC
V G S =4.5V
S ingle P ulse
T c=25 C
0.1
Qg, T otal G ate C harge (nC )
)L
11
0.03
16
ON
S(
1
10
20
50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T S 2306
V DD
ton
5
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
INVE R TE D
10%
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
Thermal Resistance
Normalized Transient
10
1
0.5
0.2
0.1
P DM
0.1
t1
0.05
0.02
0.01
0.00001
on
1.
2.
3.
4.
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
t2
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T S 2306
A
L
M
F
G
J
B
C
I
H
E
D (TYP.)
F
2.70
3.10
2.40
2.80
0.106
0.094
0.110
1.40
1.60
0.055
0.063
0.35
0.50
0.014
0.020
0
0.10
0
0.004
0.45
0.55
0.022
0.018
0.075 REF.
1.00
0.10
1.30
0.20
0.039
0.004
G
I
1.90 REF.
0.122
0.051
0.008
J
L
0.40
-
0.016
0.45
1.15
0.033
0.045
M
0°
10°
0°
10°
6
-
S T S 2306
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
UNIT:㎜
PACKAGE
SOT-23
A0
3.20
±0.10
B0
3.00
±0.10
K0
D0
1.33
±0.10
∮1.00
+0.25
D1
∮1.50
+0.10
E
8.00
+0.30
-0.10
E1
E2
P0
P1
P2
T
1.75
±0.10
3.50
±0.05
4.00
±0.10
4.00
±0.10
2.00
±0.05
0.20
±0.02
SOT-23 Reel
UNIT:㎜
TAPE SIZE
REEL SIZE
M
N
W
W1
H
K
S
G
R
V
8㎜
∮178
∮178
±1
∮60
±1
9.00
±0.5
12.00
±0.5
∮13.5
±0.5
10.5
2.00
±0.5
∮10.0
5.00
18.00
7