S T S 2306 S amHop Microelectronics C orp. Apr,21 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 45 @ V G S = 4.5V 20V S OT-23 package. 2.8A 60 @ V G S =2.5V D S OT-23 D G S G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter Limit Unit Drain-S ource Voltage V DS 20 V Gate-S ource Voltage V GS 8 V Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed ID 2.8 A IDM 12 A Drain-S ource Diode Forward C urrent a IS 1.25 A Maximum P ower Dissipation a PD 1.25 W T J , T S TG -55 to 150 Operating Junction and S torage Temperature R ange C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R thJA 1 100 C /W S T S 2306 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 16V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 8V,V DS = 0V 100 nA OFF CHAR ACTE R IS TICS 20 V uA ON CHAR ACTE R IS TICS b Gate Threshold Voltage V GS (th) Drain-S ource On-S tate R esistance R DS (ON) gFS Forward Transconductance 0.8 1.5 V GS = 4.5V, ID = 2.8A 33 45 V GS = 2.5V, ID = 2.0A 52 60 V DS = 7V, ID = 5A 5 S 608 PF 114 PF 86 PF 10 ns 14 ns 39 ns 26 ns 9.2 nC 1.6 nC 2.6 nC V DS = V GS , ID = 250uA 0.5 V m ohm DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =10V, V GS = 0V f =1.0MH Z CRSS c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 10V, ID = 1A, V GE N = 4.5V, R L = 10 ohm R GE N = 10 ohm V DS =10V, ID = 1A, V GS =4.5V 2 S T S 2306 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage V GS = 0V, Is =1.25A VSD 0.84 1.3 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 10 20 I D , Drain C urrent (A) ID , Drain C urrent(A) 8 V G S =10,9,8,7,6,5,4V 6 V G S =2V 4 2 0 0 1 2 3 4 5 -55 C 15 10 5 0 0.0 6 V DS , Drain-to-S ource Voltage (V ) 880 C is s 440 220 C os s C rs s 0 5 10 15 20 25 1 1.5 2 2.5 3 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance(Ohms ) 1100 660 0.5 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 0 25 C T j=125 C V G S =3V C , C apacitance (pF ) 5 C Min Typ Max Unit Condition S ymbol 30 2.2 V G S =4V I D =3A 1.8 1.4 1.0 0.6 0.2 0 -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 4. On-R es is tance Variation with Temperature F igure 3. C apacitance 3 V 1.3 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage S T S 2306 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20 10 Is , S ource-drain current (A) 15 12 9 6 3 V DS =7V 0 0 5 10 15 20 1 T J =25 C 0 0.6 25 0.8 1.0 1.2 1.4 1.6 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 5 V DS =10V I D =1A 4 I D , Drain C urrent (A) gF S , T rans conductance (S ) I D =250uA 1.10 T j, J unction T emperature ( C ) 18 V G S , G ate to S ource V oltage (V ) 1.15 3 2 1 0 0 2 4 6 8 10 12 14 10 RD im it 10 1s 0.1 10 0m ms s DC V G S =4.5V S ingle P ulse T c=25 C 0.1 Qg, T otal G ate C harge (nC ) )L 11 0.03 16 ON S( 1 10 20 50 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T S 2306 V DD ton 5 V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL INVE R TE D 10% 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit Thermal Resistance Normalized Transient 10 1 0.5 0.2 0.1 P DM 0.1 t1 0.05 0.02 0.01 0.00001 on 1. 2. 3. 4. Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T S 2306 A L M F G J B C I H E D (TYP.) F 2.70 3.10 2.40 2.80 0.106 0.094 0.110 1.40 1.60 0.055 0.063 0.35 0.50 0.014 0.020 0 0.10 0 0.004 0.45 0.55 0.022 0.018 0.075 REF. 1.00 0.10 1.30 0.20 0.039 0.004 G I 1.90 REF. 0.122 0.051 0.008 J L 0.40 - 0.016 0.45 1.15 0.033 0.045 M 0° 10° 0° 10° 6 - S T S 2306 SOT-23 Tape and Reel Data SOT-23 Carrier Tape UNIT:㎜ PACKAGE SOT-23 A0 3.20 ±0.10 B0 3.00 ±0.10 K0 D0 1.33 ±0.10 ∮1.00 +0.25 D1 ∮1.50 +0.10 E 8.00 +0.30 -0.10 E1 E2 P0 P1 P2 T 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 4.00 ±0.10 2.00 ±0.05 0.20 ±0.02 SOT-23 Reel UNIT:㎜ TAPE SIZE REEL SIZE M N W W1 H K S G R V 8㎜ ∮178 ∮178 ±1 ∮60 ±1 9.00 ±0.5 12.00 ±0.5 ∮13.5 ±0.5 10.5 2.00 ±0.5 ∮10.0 5.00 18.00 7