SavantIC Semiconductor Product Specification 2SB794 2SB795 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD985 2SD986 APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SB794 VCBO Collector-base voltage -60 Open base 2SB795 VEBO Emitter-base voltage IC V -80 2SB794 Collector-emitter voltage UNIT -60 Open emitter 2SB795 VCEO VALUE V -80 Open collector -8 V Collector current (DC) -1.5 A ICM Collector current-peak -3.0 A PD Total power dissipation Ta=25 1.0 TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB794 2SB795 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SB794 MIN TYP. MAX UNIT -60 V IC=-10mA ;IB=0 -80 2SB795 VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-1mA -2.0 V -1.0 µA -2.0 mA ICBO Collector cut-off current 2SB794 2SB795 VCB=-60V; IE=0 VCB=-80V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.5A ; VCE=-2V 1000 hFE-2 DC current gain IC=-1A ; VCE=-2V 2000 30000 Switching times ton Turn-on time tstg Storage time tf IC=-1.0A ; IB1=-IB2=-1.0mA VCC=-50V;RL=50B Fall time hFE-2 Classifications M L K 2000-5000 4000-10000 8000-30000 2 0.5 µs 1.0 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB794 2SB795