SavantIC Semiconductor Product Specification 2SB1151 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1691 ·Low saturation voltage ·Large current ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current (DC) -5 A ICM Collector current-Peak -8 A IB Base current -1 A PD Total power dissipation Ta=25 1.3 TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1151 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat CONDITIONS MIN TYP. MAX UNIT IC=-2.0A ;IB=-0.2A -0.3 V Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -1.2 V ICBO Collector cut-off current VCB=-50V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-7V; IC=0 -10 µA hFE-1 DC current gain IC=-0.1A ; VCE=-1V 60 hFE-2 DC current gain IC=-2A ; VCE=-1V 100 hFE-3 DC current gain IC=-5A ; VCE=-2V 50 400 Switching times ton Turn-on time tstg Storage time tf IC=-2A; IB1=-IB2=-0.2A RL=5.0@;VCCA10V Fall time hFE-2 Classifications M L K 100-200 160-320 200-400 2 0.15 1.0 µs 0.78 2.5 µs 0.18 1.0 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1151 SavantIC Semiconductor Product Specification 2SB1151 Silicon PNP Power Transistors 4