2N3906 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 COLLECTOR 3 ƔFEATURES 2 BASE . Power Dissipation 1 EMITTER PCM: 625 mW (Ta=25к) 1 2 . Collector Current 3 ICM: -200 mA . Collector - Base Voltage V(BR)CBO: -40 V ƔELECTRICAL CHARACTERISTICS (T Parameter Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current A = 25 к unless otherwise specified) SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Transition Frequency fT Operating and Storage Junction Temperature Range TJ, TSTG TEST CONDITIONS IC = -1 mA, IB = 0 A IC = -100 µA, IE = 0 A IE = -100 µA, IC = 0 A VCB = -40 V, IE = 0 A VCE = -40 V, IB = 0 A VEB = -5 V, IC = 0 A VCE = -1 V, IC = -10 mA VCE = -1 V, IC = -50 mA IC = -50 mA, IB = -5 mA IC = -50 mA, IB = -5 mA VCE = -20 V, IC = -10 mA f = 100 MHz - Min. -40 -40 -5 100 60 - Typ. - Max. -0.1 -0.1 -0.1 400 0.3 -0.95 UNIT V V V 250 - - MHz µA V V к -55 ~ +150 ƔCLASSIFICATION OF hFE(1) Rank Rang http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A O 100 ~ 200 Y 200 ~ 300 G 300 ~ 400 Any changing of specification will not be informed individual Page 1 of 3 2N3906 PNP Silicon Elektronische Bauelemente General Purpose Transistor ƔTYPICAL CHARACTERISTICS 3V 275 < 1 ns 275 10 k +0.5 V 10.6 V 3V < 1 ns +9.1 V 10 k 0 CS < 4 pF* 300 ns DUTY CYCLE = 2% CS < 4 pF* 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V * Total shunt capacitance of test jig and connectors h FE, DC CURRENT GAIN (NORMALIZED) Delay and Rise Time Equivalent Test Circuit 2.0 Storage and Fall Time Equivalent Test Circuit TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 -ā55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 DC Current Gain http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2N3906 PNP Silicon VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Elektronische Bauelemente General Purpose Transistor 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.1 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) q V , TEMPERATURE COEFFICIENTS (mV/ °C) Collector Saturation Region VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) “ON” Voltages http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 100 200 1.0 0.5 qVC FOR VCE(sat) 0 +25°C TO +125°C -ā55°C TO +25°C -ā0.5 +25°C TO +125°C -ā1.0 -ā55°C TO +25°C qVB FOR VBE(sat) -ā1.5 -ā2.0 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 Temperature Coefficients Any changing of specification will not be informed individual Page 3 of 3