2N3904 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 COLLECTOR 3 ƔFEATURES 2 BASE . Power Dissipation 1 1 EMITTER PCM: 625 mW (Ta=25к) . Collector Current 2 3 ICM: 200 mA . Collector - Base Voltage V(BR)CBO: 60 V ƔELECTRICAL CHARACTERISTICS (T Parameter Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current A = 25 к unless otherwise specified) SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Transition Frequency fT Operating and Storage Junction Temperature Range TJ, TSTG TEST CONDITIONS IC = 1 mA, IB = 0 A IC = 100 µA, IE = 0 A IE = 100 µA, IC = 0 A VCB = 60 V, IE = 0 A VCE = 40 V, IB = 0 A VEB = 5 V, IC = 0 A VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 50 mA IC = 50 mA, IB = 5 mA IC = 50 mA, IB = 5 mA VCE = 20 V, IC = 10 mA f = 100 MHz - Min. 40 60 6 100 60 - Typ. - Max. 0.1 0.1 0.1 400 0.3 0.95 UNIT V V V 300 - - MHz µA V V к -55 ~ +150 ƔCLASSIFICATION OF hFE(1) Rank Rang http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A O 100 ~ 200 Y 200 ~ 300 G 300 ~ 400 Any changing of specification will not be informed individual Page 1 of 3 2N3904 NPN Silicon Elektronische Bauelemente General Purpose Transistor ƔTYPICAL CHARACTERISTICS DUTY CYCLE = 2% 300 ns +3 V +10.9 V DUTY CYCLE = 2% 275 10 k -ā0.5 V t1 10 < t1 < 500 ms +3 V +10.9 V 275 10 k 0 CS < 4 pF* < 1 ns CS < 4 pF* -ā9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors h FE, DC CURRENT GAIN (NORMALIZED) Delay and Rise Time Equivalent Test Circuit Storage and Fall Time Equivalent Test Circuit 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 -ā55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) DC Current Gain http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2N3904 NPN Silicon VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Elektronische Bauelemente General Purpose Transistor 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Collector Saturation Region 1.0 TJ = 25°C VBE(sat) @ IC/IB =10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 qVC FOR VCE(sat) 0 -ā55°C TO +25°C -ā0.5 -ā55°C TO +25°C -ā1.0 +25°C TO +125°C qVB FOR VBE(sat) -ā1.5 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) 1.2 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) “ON” Voltages http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 100 200 -ā2.0 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) Temperature Coefficients Any changing of specification will not be informed individual Page 3 of 3