SID9435
-20A, -30V,RDS(ON)50m Ω
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
TO-251
Description
2.3±0.1
6.6±0.2
5.3±0.2
The SID9435 utilized advanced processing techniques to
0.5±0.05
achieve the lowest possible on-resistance, extremely efficient
and cost-effectiveness device.
7.0±0.2
5.6±0.2
The TO-251 is universally used for commercial-industrial
applications.
1.2±0.3
0.75±0.15
7.0±0.2
Features
0.6±0.1
* Low Gate Charge
0.5±0.1
2.3REF.
* Simple Drive Requirement
G
* Fast Switching
D
S
Dimensions in millimeters
D
Marking Code: 9435
XXXX(Date Code)
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
o
Ratings
Unit
-30
V
± 20
V
Continuous Drain Current
ID@TC=25 C
-20
A
Continuous Drain Current
o
-13
A
IDM
-72
A
PD@TC= 25oC
31
W
0.25
W/ C
Pulsed Drain Current
ID@TC=100 C
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
o
o
C
-55~+150
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
4.0
o
Thermal Resistance Junction-ambient
Max.
Rthj-a
110
o
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01-Jun-2002 Rev. A
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SID9435
-20A, -30V,RDS(ON)50m Ω
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
- 30
_
_
V
BVDS/ Tj
_
- 0.1
_
V/ C
VGS(th)
-1.0
_
-3.0
V
IGSS
_
_
±100
nA
VGS=±20V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-25
uA
VDS=-24V,VGS=0
_
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
2
Static Drain-Source On-Resistance
IDSS
RD S (O N )
_
Total Gate Charge2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
_
_
50
90
10
16
_
5
_
9.6
_
18
_
19
_
14
_
463
740
187
_
mΩ
Test Condition
VGS=0V, ID=-250uA
o
Reference to 25 C, ID=- 1mA
VDS=VGS, ID=-250uA
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-5 A
nC
ID=-10A
VDS=-24V
VGS=-4.5V
VDD=-15V
ID=-10A
nS
VGS=-10 V
RG=3.3 Ω
RD=1.5Ω
pF
VGS=0V
VDS=25V
_
S
VDS=-10V, ID=-6 A
Max.
Unit
Test Condition
-1.2
V
IS=-10A, VGS=0V.
nS
IS=-10A, VGS=0V.
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
9.6
Symbol
Min.
Typ.
Forward On Voltage 2
VSD
_
_
Reverse Recovery Time
Trr
_
34
_
Reverse Recovery Change
Qrr
30
_
140
Unit
o
_
3
_
Max.
f=1.0MHz
_
Source-Drain Diode
Parameter
_
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
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01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SID9435
Elektronische Bauelemente
-20A, -30V,RDS(ON)50m Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 3 of 4
SID9435
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-20A, -30V,RDS(ON)50m Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4