SSG9962
7A, 40V,RDS(ON) 25mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
The SSG9962 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
45
o
0.375 REF
6.20
5.80
0.25
3.80
4.00
1.27Typ.
0.35
0.49
4.80
5.00
0.10~0.25
o
0
o
8
Features
1.35
1.75
Dimensions in millimeters
* Simple Drive Requirement
* Lower On-Resistance
D1
D1
D2
D2
8
7
6
5
D1
Date Code
D2
9962SS
G2
G1
1
2
3
4
S1
G1
S2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current, VGS@10V
Ratings
Unit
VDS
40
V
VGS
±20
V
o
7
A
o
ID@TA=70 C
5.5
A
IDM
20
A
2
W
0.016
W/ C
ID@TA=25 C
3
Continuous Drain Current, VGS@10V
Pulsed Drain Current
Symbol
1
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
o
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
62.5
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSG9962
7A, 40V,RDS(ON) 25mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Static Drain-Source On-Resistance2
Symbol
Min.
Typ.
Max.
Unit
BVDSS
40
_
_
V
BVDS/ Tj
_
0.1
_
V/ oC
VGS(th)
1.0
_
3.0
V
VDS=VGS, ID=250uA
IGSS
_
_
±100
nA
VGS=± 20V
_
_
1
uA
VDS=40V,VGS=0
_
_
25
uA
VDS=32V,VGS=0
_
_
25
IDSS
RDS(ON)
_
_
Qg
_
25.8
Gate-Source Charge
Qgs
_
4.4
_
Gate-Drain ("Miller") Charge
Qgd
_
9.1
_
Td(ON)
_
10.6
_
Tr
_
6.8
_
Td(Off)
_
26.3
_
Tf
_
12
_
Total Gate Charge
2
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Forward Transconductance
_
_
Crss
_
Gfs
_
1165
mΩ
Test Condition
VGS=0V, ID=250uA
Reference to 25oC, ID=1mA
VGS=10V, ID=7A
VGS=4.5V, ID=5A
40
_
nC
ID=7 A
VDS=32V
VGS=10V
VDD=20V
ID=1A
nS
VGS=10 V
RG=5.7Ω
RD=20 Ω
_
205
_
142
_
11
_
pF
VGS=0V
VDS= 25V
S
VDS=10V, ID=7A
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Reverse Recovery Time
2
Reverse Recovery Charge
Symbol
Min.
Typ.
VSD
_
_
Trr
_
Qrr
_
21.2
16
Max.
Unit
Test Condition
1.2
V
IS=1.7A, VGS=0V.
_
nS
_
nC
Is=7A, V GS=0V
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSG9962
Elektronische Bauelemente
7A, 40V,RDS(ON) 25mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 3 of 4
SSG9962
Elektronische Bauelemente
7A, 40V,RDS(ON) 25mΩ
N-Channel Enhancement Mode Power Mos.FET
Description
GND
Typically a large storage capacitor is connected from this pin to ground to insure that the input
1.3V
or open= output enable.
tage does not sag below the minimum dropout voltage during the load
V higher than Vout in order for the device to
NC
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 4 of 4