SSG9975 7.6A, 60V,RDS(ON) 21mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOP-8 Description 0.19 0.25 0.40 0.90 The SSG9975 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 45 o 0.375 REF 6.20 5.80 0.25 3.80 4.00 1.27Typ. 0.35 0.49 4.80 5.00 0.10~0.25 o 0 o 8 Features 1.35 1.75 Dimensions in millimeters * RoHS Compliant * Lower On-Resistance * High Breakdown Voltage D1 D1 D2 D2 8 7 6 5 D1 Date Code D2 9 975SS G2 G1 1 2 3 4 S1 G1 S2 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Ratings Unit VDS 60 V VGS ±25 V 7.6 A ID@TA=70 C 6.1 A IDM 30 A 2 W o ID@TA=25 C Continuous Drain Current, VGS@10V o 3 Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol 1 o PD@TA=25 C Total Power Dissipation 0.016 Linear Derating Factor Tj, Tstg Operating Junction and Storage Temperature Range o W/ C o -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol 3 Max. Rthj-a Ratings 62.5 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 SSG9975 7.6A, 60V,RDS(ON) 21mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance2 Symbol Min. Typ. Max. Unit BVDSS 60 _ _ V BVDS/ Tj _ 0.06 _ V/ oC VGS(th) 1.0 _ 3.0 V VDS=VGS, ID=250uA IGSS _ _ ±100 nA VGS=± 25V _ _ 1 uA VDS=60V,VGS=0 _ _ 25 uA VDS=48V,VGS=0 _ _ 21 IDSS RDS(ON) _ _ 27 Qg _ 26 40 Gate-Source Charge Qgs _ 6 _ Gate-Drain ("Miller") Charge Qgd _ 14 _ Td(ON) _ 14 _ Tr _ 7 _ Td(Off) _ 40 _ Tf _ 13 _ 2320 3700 200 _ 170 _ 12 _ Total Gate Charge 2 Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Forward Transconductance _ _ Crss _ Gfs _ mΩ Test Condition VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=7A VGS=4.5V, ID=5A nC ID=7 A VDS=48V VGS=4.5 V VDD=30V ID=1A nS VGS=10V RG=3.3Ω RD=30 Ω pF VGS=0V VDS= 25V S VDS=10V, ID=7A f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Reverse Recovery Time 2 Reverse Recovery Charge Symbol Min. Typ. VSD _ _ Trr _ Qrr _ 34 48 Max. Unit Test Condition 1.2 V IS=1.7A, VGS=0V. _ nS _ nC Is=7A, V GS=0V dl/dt=100A/us Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board;135 °C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SSG9975 Elektronische Bauelemente 7.6A, 60V,RDS(ON) 21mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Any changing of specification will not be informed individual Page 3 of 4 SSG9975 Elektronische Bauelemente 7.6A, 60V,RDS(ON) 21mΩ N-Channel Enhancement Mode Power Mos.FET Description GND Typically a large storage capacitor is connected from this pin to ground to insure that the input 1.3V or open= output enable. tage does not sag below the minimum dropout voltage during the load V higher than Vout in order for the device to NC Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4