ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ․Capable of being used in the low frequency to high frequency range. Features: ․Large current capacity and wide ASO. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Collector Current (Pulse) -ICP 400 mA Collector Dissipation Ptot 500 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/05/2004 ST 2SA608N Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group F hFE 160 - 320 - G hFE 280 - 560 - hFE 70 - - - -V(BR)CBO 60 - - V -V(BR)CEO 50 - - V -V(BR)EBO 6 - - V -ICBO - - 0.1 μA -IEBO - - 0.1 μA -VCE(sat) - - 0.3 V -VBE(sat) - - 1 V fT - 200 - MHz COB - 4.5 - pF DC Current Gain at -VCE=6V, -IC=1mA at -VCE=6V, -IC=0.1mA Collector Base Breakdown Voltage at -IC=10μA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=40V Emitter Cutoff Current at -VEB=5V Collector Emitter Saturation Voltage at -IC=100mA, -IB=10mA Base Emitter Saturation Voltage at -IC=100mA, -IB=10mA Gain Bandwidth Product at -VCE=6V, -IC=10mA Output Capacitance at -VCB=6V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/05/2004