ST 2SB1116 / 2SB1116A PNP Silicon Epitaxial Planar Transistor Audio frequency power amplifier and medium speed switching. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Symbol 2SB1116 2SB1116A 2SB1116 2SB1116A Value 60 80 50 60 -VCBO -VCEO Emitter Base Voltage Unit V V -VEBO 6 V Collector Current -IC 1 A Collector Current (Pulse) -ICP 2 A Power Dissipation Ptot 0.75 Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O W C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 0.1 A at -VCE = 2 V, -IC = 1 A Collector Cutoff Current at -VCB = 60 V Emitter Cutoff Current at -VEB = 6 V Collector Emitter Saturation Voltage at -IC = 1 A, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 1 A, -IB = 50 mA Base Emitter On Voltage at -VCE = 2 V, -IC = 50 mA Gain Bandwidth Product at -VCE = 2 V, -IC = 100 mA Y G L Symbol Min. Max. Unit hFE hFE hFE hFE 135 200 300 81 270 400 600 - - -ICBO - 100 nA -IEBO - 100 nA -VCE(sat) - 0.4 V -VBE(sat) - 1.2 V -VBE(on) 0.6 0.7 V fT 70 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/11/2006 ST 2SB1116 / 2SB1116A Figure 5. Power Derating SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/11/2006