AO4710 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4710 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID =12.7A (VGS = 10V) RDS(ON) < 11.8mΩ (VGS = 10V) RDS(ON) < 14.2mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain AF Current Avalanche Current B C Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation C Junction and Storage Temperature Range Maximum Junction-to-Lead C ±12 V 10 IDM 60 A IAR 22 A EAR 73 mJ 3.1 W 2.0 -55 to 150 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A IDSM PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Units V 12.7 TA=70°C Pulsed Drain Current Maximum 30 RθJA RθJL Typ 32 60 17 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4710 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=10V, VDS=5V 60 ID(ON) TJ=125°C VGS=10V, ID=12.7A RDS(ON) TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=11A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current IS VDS=5V, ID=12.7A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Max Units 0.02 0.1 6 20 0.1 µA 1.9 2.3 V 9.8 11.8 15.2 19.0 11.7 14.2 mΩ 0.5 V 5 A 2376 pF 30 IDSS VGS(th) Typ V A VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=12.7A mΩ 78 0.38 1980 VGS=0V, VDS=15V, f=1MHz mA S 317 pF 111 pF 1.3 Ω 2.0 33 43 nC 15.0 20 nC 5.3 nC 6.0 nC 5.5 ns VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 5.5 ns 27.0 ns 4.3 ns IF=12.7A, dI/dt=300A/µs 11.2 trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=12.7A, dI/dt=300A/µs 13 7 ns nC A: The value of R θJA is measured withthe device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev1: June 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4710 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 VDS=5V 25 6V 4.5V 20 ID(A) ID (A) 60 15 40 10 VGS=3.5V 20 5 0 125° 0 0 1 2 3 4 1 5 1.5 VDS (Volts) 15 2.5 3 3.5 4 Normalized On-Resistance 2 VGS=4.5V RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 12 9 VGS=10V 6 VGS=10V ID=12.7A 1.8 1.6 VGS=4.5V 1.4 ID=11A 1.2 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+02 1.0E+01 ID=12.7A 25 125°C 1.0E+00 125°C 20 IS (A) RDS(ON) (mΩ ) 25°C 15 25°C 1.0E-01 1.0E-02 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4710 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 2500 VDS=15V ID=12.7A 6 Ciss Capacitance (pF) VGS (Volts) 8 4 2000 1500 1000 Crss 2 500 0 Coss 0 0 5 10 15 20 25 30 35 40 0 Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 100.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 10µs 90 TJ(Max)=150°C TA=25°C 80 1ms RDS(ON) limited 1.0 100µ 70 Power (W) 10.0 ID (Amps) 5 10ms DC TJ(Max)=150°C TA=25°C 0.1 60 50 40 30 20 10 0.0 0.1 1 10 0 0.0001 100 VDS (Volts) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4710 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 1.0E-02 20A 0.8 VDS=24V 0.7 VSD(V) IR (A) 1.0E-03 VDS=12V 1.0E-04 0.6 0.5 10A 5A 0.4 0.3 1.0E-05 0.2 IS=1A 0.1 1.0E-06 0 DYNAMIC 50 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature 25 8 di/dt=800A/us 2.5 Irm trr (ns) 4 Irm (A) 125ºC di/dt=800A/us 12 25ºC Qrr 10 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 15 6 15 50 125ºC 20 Qrr (nC) 0 2 125ºC 9 1.5 trr S 0 25ºC 6 1 25ºC 25ºC 2 5 S 3 0.5 125ºC 0 0 0 5 10 15 20 25 10 125ºC 7 6 5 125º 10 25ºC 5 Qrr 4 3 0 0 200 400 600 800 0 1000 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 25 30 2.5 25ºC 2 9 1.5 trr 25ºC 6 1 2 1 Irm 20 Is=20A 125ºC 12 trr (ns) Qrr (nC) 25ºC 15 15 3 15 8 Is=20A 10 18 9 Irm (A) 20 5 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 0 0 30 S 0 3 0 0 200 0.5 S 125ºC 400 600 800 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com