CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEPF630B 200V 0.4Ω 9A 10V CEBF630B 200V 0.4Ω 9A 10V CEIF630B 200V 0.4Ω 9A 10V CEFF630B 200V 0.4Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D G S CEB SERIES TO-263(DD-PAK) G D S G D S CEI SERIES TO-262(I2-PAK) G D CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±30 Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C ID IDM TO-220F 9 f PD Units V V 9 e e A A 36 36 74 35 W 0.59 0.28 W/ C Single Pulsed Avalanche Energy d EAS 150 150 mJ Single Pulsed Avalanche Current d IAS 9 9 A Operating and Store Temperature Range TJ,Tstg -55 to 150 C Symbol Limit Units Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 1.7 3.6 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W 2004.November http://www.cetsemi.com 4 - 194 CEPF630B/CEBF630B CEIF630B/CEFF630B Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 200 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 200V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 0.4 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA 2 RDS(on) VGS = 10V, ID = 4.5A 0.34 gFS VDS = 40V, ID = 4.5A 7 S 550 pF 100 pF 30 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 100V, ID = 9A, VGS = 10V, RGEN = 25Ω 25 50 ns 84 150 ns 72 130 ns Turn-On Fall Time tf 77 140 ns Total Gate Charge Qg 22 29 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 160V, ID = 9A, VGS = 10V 3 nC 12 nC Drain-Source Diode Characteristics and Maximun Ratings IS g Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 9A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L = 3mH, IAS = 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 6A . 4 - 195 9 A 1.5 V 4 CEPF630B/CEBF630B CEIF630B/CEFF630B 18 10 ID, Drain Current (A) ID, Drain Current (A) VGS=10,9,8V 15 12 VGS=7V 9 6 VGS=6V 3 2 4 6 2 8 10 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 6 VGS, Gate-to-Source Voltage (V) Ciss 600 450 300 Coss 150 Crss 0 10 20 30 40 50 2.2 1.9 ID=4.5A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 4 VDS, Drain-to-Source Voltage (V) 750 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 1.VDS=40V 2.Pulse Test -1 8 900 0 -55 C 25 C 10 0 1.2 TJ=150 C 0 VGS=5V 0 1.3 10 1 VGS=0V 10 10 10 -25 0 25 50 75 100 125 1 0 -1 0.4 150 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 - 196 10 VDS=160V ID=9A 8 6 4 2 0 10 4 8 12 16 20 24 4 1ms 1 10ms DC 10 10 0 100µs RDS(ON)Limit ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEPF630B/CEBF630B CEIF630B/CEFF630B 0 TC=25 C TJ=150 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 0.1 -1 0.05 10 10 0.02 0.01 Single Pulse -2 PDM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 -3 10 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 - 197 10 0 10 1 3