DC COMPONENTS CO., LTD. 2SB772D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Pinning 1 = Emitter 2 = Collector 3 = Base .163(4.12) .153(3.87) Absolute Maximum Ratings(TA=25oC) Characteristic Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current(DC) IC -3 A Collector Current(Pulse) IC -7 A Base Current(DC) IB -0.6 A Total Power Dissipation(TC=25 C) PD o 10 PD 1 Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .123(3.12) .113(2.87) .300(7.62) .290(7.37) 1 2 3 .084(2.12) .074(1.87) .084(2.14) .074(1.88) .056(1.42) .046(1.17) .591(15.0) .551(14.0) .033(0.84) .027(0.68) .180 Typ (4.56) W Total Power Dissipation(TA=25 C) .146(3.70) .136(3.44) .060(1.52) .050(1.27) .148(3.75) .138(3.50) Symbol o .044(1.12) .034(0.87) .027(0.69) .017(0.43) .090 Typ (2.28) W C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -40 - - V IC=-100µA Collector-Emitter Breakdown Voltage BVCEO -30 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA ICBO - - -1 µA VCB=-30V Collector Cutoff Current Test Conditions IEBO - - -1 µA VEB=-3V Collector-Emitter Saturation Voltage(1) VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.2A Base-Emitter Saturation Voltage(1) VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A Emitter Cutoff Current (1) DC Current Gain hFE1 30 - - - IC=-20mA, VCE=-2V hFE2 100 200 400 - IC=-1A, VCE=-2V Transition Frequency fT - 80 - MHz Output Capacitance Cob - 55 - pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE2 Rank Q P E Range 100~200 160~320 200~400 IC=-0.1A, VCE=-5V IE=0, VCB=-10V, f=1MHz