DC COMPONENTS CO., LTD. DC9013 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 1W output amplifier of portable redios in class B push-pull operation. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Base Current IB 100 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .500 Min (12.70) .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO 40 - - V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA, IC=0 ICBO - - 100 nA VCB=25V, IE=0 Collector Cutoff Current Emitter Cutoff Current Test Conditions IEBO - - 100 nA VEB=3V, IC=0 VCE(sat) - - 0.6 V IC=500mA, IB=50mA Base-Emitter Saturation Voltage VBE(sat) - - 1.2 V IC=500mA, IB=50mA Base-Emitter On Voltage VBE(on) - - 0.9 V IC=10mA, VCE=1V hFE1 64 120 300 - IC=50mA, VCE=1V (1) Collector-Emitter Saturation Voltage (1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width hFE2 40 - - - fT 100 - - MHz - - 8 pF Cob 380µs, Duty Cycle IC=500mA, VCE=1V IC=10mA, VCE=1V, f=100MHz VCB=10V, f=1MHz 2% Classification of hFE1 Rank D E F G H I I1 I2 Range 64~91 78~112 96~135 112~166 144~202 176~300 176~246 214~300