DCCOM DC8050

DC COMPONENTS CO., LTD.
DC8050
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 2W output amplifier of portable
radios in class B push-pull operation.
TO-92
Pinning
.190(4.83)
.170(4.33)
1 = Emitter
2 = Base
3 = Collector
o
2 Typ
.190(4.83)
.170(4.33)
o
Absolute Maximum Ratings(TA=25oC)
Characteristic
2 Typ
Symbol
Rating
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
1.5
A
Base Current
IB
500
mA
Total Power Dissipation
PD
1
W
Total Power Dissipation(TC=25 C)
PD
2
W
Junction Temperature
TJ
+150
o
-55 to +150
o
o
Storage Temperature
TSTG
.500
Min
(12.70)
Unit
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
3 2 1
.050
o
o
5 Typ. 5 Typ. (1.27) Typ
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
40
-
-
V
IC=100µA
Collector-Emitter Breakdown Voltage
BVCEO
25
-
-
V
IC=2mA
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
V
IE=100µA
ICBO
-
-
0.1
µA
VCB=35V
IEBO
-
-
0.1
µA
VEB=6V
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
(1)
(1)
(1)
DC Current Gain(1)
Transition Frequency
(1)Pulse Test: Pulse Width
VCE(sat)
-
-
0.5
V
IC=0.8A, IB=80mA
VBE(sat)
-
-
1.2
V
IC=0.8A, IB=80mA
VBE(on)
-
-
1
V
IC=10mA, VCE=1V
hFE1
45
-
-
-
IC=5mA, VCE=1V
hFE2
85
-
500
-
IC=100mA, VCE=1V
hFE3
40
-
-
-
IC=800mA, VCE=1V
fT
380µs, Duty Cycle
100
2%
-
-
MHz
IC=50mA, VCE=10V
Classification of hFE2
Rank
B
C
D
E
Range
85~160
120~200
160~300
250~500