DC COMPONENTS CO., LTD. DC8050 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o Absolute Maximum Ratings(TA=25oC) Characteristic 2 Typ Symbol Rating Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Base Current IB 500 mA Total Power Dissipation PD 1 W Total Power Dissipation(TC=25 C) PD 2 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .500 Min (12.70) Unit .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 40 - - V IC=100µA Collector-Emitter Breakdown Voltage BVCEO 25 - - V IC=2mA Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=100µA ICBO - - 0.1 µA VCB=35V IEBO - - 0.1 µA VEB=6V Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage (1) (1) (1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width VCE(sat) - - 0.5 V IC=0.8A, IB=80mA VBE(sat) - - 1.2 V IC=0.8A, IB=80mA VBE(on) - - 1 V IC=10mA, VCE=1V hFE1 45 - - - IC=5mA, VCE=1V hFE2 85 - 500 - IC=100mA, VCE=1V hFE3 40 - - - IC=800mA, VCE=1V fT 380µs, Duty Cycle 100 2% - - MHz IC=50mA, VCE=10V Classification of hFE2 Rank B C D E Range 85~160 120~200 160~300 250~500