DC COMPONENTS CO., LTD. DMBT9013 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications. SOT-23 Pinning .020(0.50) .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .108(0.65) .089(0.25) 2 .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical oCharacteristics (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 40 - - V Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA, IC=0 ICBO - - 0.1 µA VCB=25V, IE=0 Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain(1) (1)Pulse Test: Pulse Width (1) (1) IEBO - - 0.1 µA VEB=3V, IC=0 VCE(sat) - - 0.6 V IC=500mA, IB=50mA VBE(sat) - - 1.2 V IC=500mA, IB=50mA hFE1 120 - 350 - IC=50mA, VCE=1V 40 - - - IC=500mA, VCE=1V hFE2 380µs, Duty Cycle Classification of hFE1 Rank L H Range 120~200 200~350 Test Conditions IC=100µA, IE=0 2%