DC COMPONENTS CO., LTD. R DMBTA13 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for applications requiring high current gain. SOT-23 Pinning .020(0.50) .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V Collector Current IC 300 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .108(0.65) .089(0.25) 2 .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO 30 - - V Test Conditions IC=100µA Collector-Emitter Breakdown Voltage BVCES 30 - - V IC=100µA Emitter-Base Breakdown Volatge BVEBO 10 - - V IE=10µA Collector Cutoff Current ICBO - - 100 nA VCB=30V Emitter Cutoff Current IEBO - - 100 nA VEB=10V Collector-Emitter Saturation Voltage(1) VCE(sat) - - 1.5 V IC=100mA, IB=0.1mA Base-Emitter On Voltage VBE(on) - - 2 V IC=100mA, VCE=5V hFE1 5K - - - IC=10mA, VCE=5V hFE2 10K - - - fT 125 - - MHz - - 6 pF DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Cob 380µs, Duty Cycle 2% IC=100mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz