DC COMPONENTS CO., LTD. J882 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 10W audio amplifier, voltage regulator, DC-DC converter, and relay driver. TO-252(DPAK) Pinning 1 = Base 2 = Collector 3 = Emitter .268(6.80) .252(6.40) Absolute Maximum Ratings(TA=25 Characteristic .217(5.50) .205(5.20) o C) Symbol Rating Collector-Base Voltage VCBO 40 V VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Current (pulse) IC 7 A IB 600 mA Total Power Dissipation(TC=25 C) PD 10 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .063(1.60) .055(1.40) .022(0.55) .018(0.45) 2 Unit Collector-Emitter Voltage Base Current (DC) .077(1.95) .065(1.65) .228(5.80) .213(5.40) 1 2 .059(1.50) .035(0.90) 3 .035 Max (0.90) .110(2.80) .087(2.20) .032 Max (0.80) .091 Typ (2.30) .024(0.60) .018(0.45) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO 40 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 30 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO 5 - - V IE=10µA, IC=0 IC=100µA, IE=0 Collector Cutoff Current ICBO - - 1 µA VCB=30V, IE=0 Emitter Cutoff Current IEBO - - 1 µA VEB=3V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - 0.3 0.5 V IC=2A, IB=0.2A Base-Emitter Saturation Voltage(1) VBE(sat) - 1 2 V IC=2A, IB=0.2A hFE1 30 - - - IC=20mA, VCE=2V hFE2 100 - 500 - fT - 90 - MHz - 45 - pF DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Cob 380µs, Duty Cycle 2% Classification of hFE2 Rank Q P E Range 100~200 160~320 250~500 IC=1A, VCE=2V IC=0.1A, VCE=5V, f=100MHz VCB=10V, f=1MHz