HANBit HMF1M32M8S FLASH-ROM MODULE 4MByte (1M x 32-Bit), 72pin-SIMM, 5V Part No. HMF1M32M8S (Switching for write enable/disable) GENERAL DESCRIPTION The HMF1M32M8S is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 72 -pin, both-sided, FR4-printed circuit board.In order to write control, the HMF1M32M8S provides Write Enable and Write Disable selection by SMT switch. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CE-UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output .. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL compatible PIN ASSIGNMENT FEATURES w Access time: 70, 90 and 120ns PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL 1 VSS 19 DQ4 37 A18 55 VCC 2 A3 20 DQ3 38 A16 56 A15 3 A2 21 /WE 39 VSS 57 A12 w Single + 5V ± 0.5V power supply 4 A1 22 A17 40 A6 58 A7 w Easy memory expansion 5 A0 23 A14 41 VCC 59 VCC w All inputs and outputs are TTL-compatible 6 VCC 24 A13 42 A5 60 A8 w FR4-PCB design 7 A11 25 VCC 43 A4 61 A9 8 /OE 26 DQ8 44 VCC 62 DQ24 9 A10 27 DQ9 45 /CE-UM2 63 DQ25 wSwitching for write enable and disable. w High-density 4MByte design w High-reliability, low-power design w Low profile 72-pin SIMM w Minimum 100,000 write/erase cycle 10 VCC 28 DQ10 46 /CE-UM1 64 DQ26 w Sector erases architecture 11 /CE-LL2 29 /CE-LM2 47 DQ23 65 /CE-UU2 w Sector group protection 12 /CE-LL1 30 VCC 48 DQ16 66 /CE-UU1 13 DQ7 31 /CE-LM1 49 DQ17 67 DQ31 14 DQ0 32 DQ15 50 DQ18 68 DQ30 15 DQ1 33 DQ14 51 DQ22 69 DQ29 16 DQ2 34 DQ13 52 DQ21 70 DQ28 17 DQ6 35 DQ12 53 DQ20 71 DQ27 18 DQ5 36 DQ11 54 DQ19 72 VSS w Temporary sector group unprotection OPTIONS MARKING w Timing 70ns access -70 90ns access -90 120ns access -120 SIMM TOP VIEW w Packages 72-pin SIMM URL: www.hbe.co.kr REV.02(August,2002) M 1 HANBit Electronics Co.,Ltd. HANBit HMF1M32M8S FUNCTIONAL BLOCK DIAGRAM DQ 0-DQ31 DQ 32 A0-A18 A19 A0-18 A0-18 A0-18 DQ0-7 DQ0-7 /WE /WE U1 /OE U5 /OE /CE /CE /CE-LL2 /CE-LL1 A0-18 A0-18 DQ8-15 DQ8-15 /WE /WE U2 /OE U6 /OE /CE /CE /CE-LM2 /CE-LM1 A0-18 A0-18 DQ16-23 DQ 16-23 /WE /WE U3 /OE U7 /OE /CE /CE /CE-UM2 /CE-UM1 A0-18 A0-18 DQ24-31 /WE /WE /OE /OE /WE /OE U4 /OE REV.02(August,2002) U8 /CE /CE /CE-UU2 URL: www.hbe.co.kr DQ 24-31 /WE /CE-UU1 2 HANBit Electronics Co.,Ltd. HANBit HMF1M32M8S TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Q ACTIVE WRITE H L L D ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS RATING VALUE Ambient Operating Temperature 0 oC to 70 oC Storage Temperature -65 oC to 125 oC Applied Input Voltage -0.5V to 7.0V Applied Output Voltage -0. 5V to 7.0V VCC to Ground Potential -0.2V to 7.0V A9 & /OE -0.2V to 12.5V wNOTICE: Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. Specifications contained within the following tables are subject to change. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN TYP. MAX Vcc for ±5% device Supply Voltages VCC 4.75V 5.25V Vcc for ± 10% device Supply Voltages Vcc 4.5V 5.5V Ground VSS 0 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, V IN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±10 µA VCC + V Input High Voltage VIH 0.7x VCC 0.3 URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co.,Ltd. HANBit HMF1M32M8S Input Low Voltage VIL -0.5 2.4 0.8 V Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH V Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL 0.45 V Vcc Active Current for Read /CE=VIL, /OE=VIH ICC1 30 mA Vcc Active Current for Program /CE=VIL, /OE=VIH ICC2 40 mA Vcc Active Current for Erase /CE=VIL, /OE=VIH ICC2 40 mA Vcc Standby Current /CE= V1H Icc3 5 mA Notes 1.V1L min.=-1.0V for pulse width is equal to or less than 50ns. V1L min. =-2.0V for pulse width is equal to or less than 20 2.V1H max. =VCC+1.5V for pulse width is equal to or less than 20ns. If V 1H is over the specified maximum value, read operation cannot be guaranteed. SWITCHING TEST CIRCUITS 5.0V 2.7kΩ Device Under Test CL Diodes = IN3064 or Equivalent 6.2kΩ Note : CL = 100pF including jig capacitance AC CHARACTERISTICS u Read Only Operations Characteristics SPEED PARAMETER DESCRIPTION tRC Read Cycle Time tACC Address Access time UNIT - 70 70 -90 90 -120 120 ns 70 90 120 ns tCE Chip Enable to Access time 70 90 120 ns tOE Output Enable time 30 35 50 ns tDF Chip Enable to Output High-Z 20 20 30 ns tOEH Output Enable Hold Time 0 0 0 ns URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co.,Ltd. HANBit tOH HMF1M32M8S Output Hold Time From Addresses, /CE or 0 /OE 0 0 ns u Erase/Program Operations PARAMETER DESCRIPTION -70 -90 -120 UNIT tWC Write Cycle Time (Note 1) 70 90 120 ns tAS Address Setup Time 0 0 0 ns tAH Address Hold Time 45 45 50 ns tDS Data Setup Time 30 45 50 ns tDH Data Hold Time 0 0 0 ns tOES Output Enable Setup Time 0 0 0 ns Read Recover Time Before Write 0 0 0 ns tCS /CE Setup Time 0 0 0 ns tCH /CE Hold Time 0 0 0 ns tWP Write Pulse Width 35 45 50 ns tWPH ns tGHWL Write Pulse Width High 20 20 20 tWHWH1 Byte Programming Operation 7 7 7 µs t WHWH2 Sector Erase Operation 1 1 1 sec tVCS Vcc set up time (Note 1) 50 50 50 µs Notes : : 1. Not 100% tested URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co.,Ltd. HANBit HMF1M32M8S u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co.,Ltd. HANBit HMF1M32M8S u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co.,Ltd. HANBit HMF1M32M8S u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co.,Ltd. HANBit HMF1M32M8S u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co.,Ltd. HANBit HMF1M32M8S PACKAGE DIMMENSIONS 2.54 mm MIN 0.25 mm MAX 1.27±0.08 Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm 1.27 (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF1M32M8S-70 4MByte 1MX 32bit 72 Pin-SIMM HMF1M32M8S-90 4MByte 1MX 32bit HMF1M32M8S-120 4MByte 1MX 32bit URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 8EA 5.0V 70ns 72 Pin-SIMM 8EA 5.0V 90ns 72 Pin-SIMM 8EA 5.0V 120ns 10 Number HANBit Electronics Co.,Ltd.