STS20NHS3LL Table 3: Absolute Maximum ratings Symbol Parameter Value Unit 30 V ± 18 V 20 A Drain Current (continuous) at TC = 100°C Drain Current (pulsed) 12.6 A 80 A Total Dissipation at TC = 25°C 2.7 W 47 -55 to 150 -55 to 150 °C/W °C °C Max Value Unit 12.5 A 1.3 J VDS Drain-source Voltage (VGS = 0) VGS Gate- source Voltage ID(1) Drain Current (continuous) at TC = 25°C ID IDM(2) Ptot Table 4: Thermal Data Rthj-amb (3) Thermal Resistance Junction-ambient Max Tj Maximum Operating Junction Temperature Tstg Storage Temperature Table 5: Avalanche Characteristics Symbol Parameter IAV Not-Repetitive Avalanche Current (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25°C, ID = IAV, VDD = 24V) ELECTRICAL CHARACTERISTICS (TJ =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 1mA, VGS = 0 Min. Typ. Max. 30 Unit V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = 24V 500 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 18V ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1mA 2.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 10A VGS = 4.5V, ID = 10A 0.0032 0.004 0.004 0.0055 Ω Ω Typ. Max. Unit 1 Table 7: Dynamic Symbol gfs (4) Ciss Coss Crss 2/9 Parameter Test Conditions Forward Transconductance VDS=15V, ID = 12A Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1MHz, VGS = 0 Min. 30 S 3950 720 70 pF pF pF STS20NHS3LL ELECTRICAL CHARACTERISTICS (CONTINUED) Table 8: Switching On Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15V, ID = 10A RG = 4.7Ω , VGS = 4.5V (see Figure 15) TBD TBD ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=15V, ID=20A VGS= 4.5V (see Figure 17) 27.5 7.9 8.7 37 nC nC nC Typ. Max. Unit Table 9: Switching Off Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 15V, ID = 10A RG= 4.7Ω , VGS = 4.5V (see Figure 15) TBD TBD ns ns Table 10: Source Drain Diode Symbol Parameter ISD ISDM Source-drain Current Source-drain Current (pulsed) VSD (4) trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 20 80 A A Forward On Voltage ISD = 10A ,VGS = 0 0.7 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10A, di/dt = 100A/µs VDD = 25V, Tj = 150°C (see Figure 16) 26 25 ns nC A 1.9 Notes: 1. 2. 3. 4. This value is rated according to Rthj-pcb Pulse width limited by safe operating area When mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t < 10sec Pulsed: pulse duration = 300µs, duty cycle 1.5% 3/9 STS20NHS3LL Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/9 STS20NHS3LL Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized BVDSS vs Temperature Figure 11: Normalized On Resistance vs Temperature Figure 14: Source-Drain Diode Forward Characteristics 5/9 STS20NHS3LL Figure 15: Switching Times Test Circuit For Resistive Load Figure 16: Test Circuit For Diode Recovery Times 6/9 Figure 17: Gate Charge Test Circuit STS20NHS3LL SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 c1 45 (typ.) e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 L 0.4 1.27 0.015 M S 0.6 0.157 0.050 0.023 8 (max.) 7/9 STS20NHS3LL Table 11: Revision History 8/9 Date Revision 24-May-2005 19-Dec-2005 1 2 Description of Changes First release Inserted curves STS20NHS3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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