◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.035Ω(MAX.) ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in ■APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP133A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low On-State Resistance : Rds(on)=0.035Ω(Vgs= 4.5V) ■PIN CONFIGURATION ■EQUIVALENT CIRCUIT ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems : Rds(on)=0.048Ω(Vgs = 2.5V) Ultra High-Speed Switching Driving Voltage : 2.5V High Density Mounting : SOP-8 ■PIN ASSIGNMENT PIN NUMBER PIN NAME FUNCTION 1 S1 Source 2 G1 Gate 3 S2 Source 4 G2 Gate 5~6 D2 Drain 7~8 D1 Drain ■ABSOLUTE MAXIMUM RATINGS Ta = 25℃ PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Vdss 20 V Gate-Source Voltage Vgss ±12 V Drain Current (DC) Id 6 A Drain Current (Pulse) Idp 20 A Reverse Drain Current Idr 6 A Channel Power Dissipation * Pd 2 W Channel Temperature Tch 150 ℃ Storage Temperature Range Tstg -55~150 ℃ * When implemented on a glass epoxy PCB XP133A1235SR ETR1112_001.doc 1475 XP133A1235SR ■ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25℃ PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds=20V, Vgs=0V - - 10 μA Gate-Source Leak Current Igss Vgs=±12V, Vds=0V - - ±1 μA Gate-Source Cut-Off Voltage Vgs(off) Id=1mA, Vds=10V 0.5 - 1.2 V Drain-Source On-State Resistance * Rds(on) Id=3A, Vgs=4.5V - 0.026 0.035 Ω Id=3A, Vgs=2.5V - 0.035 0.048 Ω Forward Transfer Admittance * | Yfs | Id=4A, Vds=10V - 14 - S Body Drain Diode Forward Voltage Vf If=6A, Vgs=0V - 0.85 1.1 V * Effective during pulse test. Dynamic Characteristics Ta = 25℃ PARAMETER SYMBOL Input Capacitance Ciss Output Capacitance Coss Feedback Capacitance Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN. TYP. MAX. UNITS - 760 - pF - 430 - pF - 200 - pF Switching Characteristics Ta = 25℃ PARAMETER SYMBOL Turn-On Delay Time td (on) Rise Time tr Turn-Off Delay Time td (off) Fall Time tf CONDITIONS Vgs=5V, Id=3A Vdd=10V MIN. TYP. MAX. UNITS - 10 - ns - 20 - ns - 55 - ns - 15 - ns Thermal Characteristics 1476 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance (Channel-Ambience) Rth (ch-a) Implement on a glass epoxy resin PCB - 62.5 - ℃/W XP133A1235SR ■TYPICAL PERFORMANCE CHARACTERISTICS 1477 XP133A1235SR ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (11) Standardized transition Thermal Resistance vs. Pulse Width 1478