P1308ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 75 13mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage TC = 25 °C Continuous Drain Current LIMITS UNITS VGS ±20 V 80 ID TC = 100 °C Pulsed Drain Current SYMBOL 1 Avalanche Current 55 IDM 250 IAR 40 Avalanche Energy L = 0.55mH EAS 400 Repetitive Avalanche Energy2 L = 0.1mH EAR 20 TC = 25 °C Power Dissipation Operating Junction & Storage Temperature Range 1 Lead Temperature ( /16” from case for 10 sec.) mJ 192 PD TC = 100 °C A W 76 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 0.65 Junction-to-Ambient RθJA 62.5 Case-to-Heatsink RθCS UNITS °C / W 0.5 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1％ 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 75 VGS(th) VDS = VGS, ID = 250µA 1.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V 1 VDS = 60V, VGS = 0V, TJ = 125 °C 10 Gate Threshold Voltage 1 V 2.3 4.0 nA µA Jun-09-2006 P1308ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 40A 10.5 gfs VDS = 50V, ID = 40A 38 Forward Transconductance1 60 A 13 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 2 2 Turn-On Delay Time 2 Rise Time2 Turn-Off Delay Time VGS = 0V, VDS = 25V, f = 1MHz 2 Fall Time2 pF 610 130 Qg Gate-Source Charge2 Gate-Drain Charge 3820 160 Qgs VDS =60V, VGS = 10V, 30 Qgd ID = 40A 55 td(on) nC 15 tr VDD = 40V, 65 td(off) ID ≅ 40A, VGS = 10V, RGS = 2.5Ω 50 tf nS 50 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 80 Pulsed Current ISM 250 Forward Voltage1 VSD 3 Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 40A, VGS = 0V trr IRM(REC) IF = IS, dlF/dt = 100A / µS Qrr 1.3 A V 100 nS 200 A 410 nC Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P1308ATG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 Jun-09-2006 P1308ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free Typical Transfer Characteristics Typical Output Characteristics 1000 8.0V ID, Drain-to-Source Current(A) ID, Drain-to-Source Current(A) 1000 7.0V 10V 6.0V 5.5V 100 5.0V VGS=4.5V VDS= 25V TJ=25°C 100 10 10 0.1 1 10 4.0 100 VDS, Drain-to-Source Voltage(V) 7000 ID= 40A 2.5 6000 2.0 5000 7.0 8.0 9.0 1.5 1.0 0.5 VGS= 10V VGS= 0V, f=1 MHZ Ciss 4000 C, Capacitance(pF) RDS(ON), Normalized Drain-to-Source On Resistance 6.0 Capacitance-Characteristics Normalized On-Resistance Vs.Temperature 3.0 5.0 VGS, Gate-to-Source Voltage(V) 3000 Coss 2000 Crss 1000 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0 TJ , Junction Temperature(°C) 1 10 100 VDS, Drain-to-Source Voltage(V) Typical Gate Charge Vs. Gate-to-Source Voltage Typical Source-Drain Diode Forward Voltage ID= 40A 1000 VDS= 60V VDS= 37V VDS= 15V 15 ISD, Rrverse Drain Current(A) VGS, Gate-to-Source Voltage(V) 20 12 8 4 0 0 40 80 120 QG, Total Gate Charge (nC) 100 T J=150° C 10 T J=25° C 1 V GS= 0V 0.1 160 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V SD , Source-to-Drain Voltage(V) 3 Jun-09-2006 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Maximum Safe Operating Area 1 r(t), Normalized Effctive Transient Thermal Resistance ID, Drain-to-Source Current(A) OPERATION IN THIS AREA LIMTED BY RDS(on) 100 100μ sec 1msec Tc=25° C RθJC=0.65° C/W Sing Pulse 10 D=0.5 0.2 0.1 0.1 P(PK) 0.05 100 1000 t1 SINGLE PULSE 0.02 0.01 10msec 1 1 TO-220 Lead Free Transient Thermal Respence Curre 1000 10 P1308ATG 0.01 0.00001 0.0001 Notes: 1.RθJC(t)=r(t)*R 2.RθJC=0.65°C/W 3.Tj+Tc=P*RθJC(t) 4.Duty Cycle, D=t1/t2 0.001 t2 0.01 0.1 t1, Rectangular Pulse Duration(sec) VDS, Drain-to-Source Voltage(V) 4 Jun-09-2006 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P1308ATG TO-220 Lead Free TO-220 (3-Lead) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. A 9.78 10.16 10.54 B 2.61 2.74 2.87 C 20 Min. Typ. Max. H 2.4 2.54 2.68 I 1.19 1.27 1.35 J 4.4 4.6 4.8 D 28.5 28.9 29.3 K 1.14 1.27 1.4 E 14.6 15.0 15.4 L 2.3 2.6 2.9 F 8.4 8.8 9.2 M 0.26 0.46 0.66 G 0.72 0.8 0.88 N 5 7° Jun-09-2006