INTERFET 2N4416

Databook.fxp 1/14/99 11:30 AM Page B-14
B-14
01/99
2N4416, 2N4416A
N-Channel Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Continuous Device Dissipation
Power Derating
At 25°C free air temperature:
2N4416
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
IDSS
Max
– 30
2N4416
2N4416A
Min
Max
– 30 V
10 mA
300 mW
2 mW°C
2N4416A
– 35 V
10 mA
300 mW
2 mW/°C
Process NJ26
Unit
– 35
Test Conditions
V
IG = – 1µA, VDS = ØV
– 0.1
– 0.1
nA
VGS = – 20V, VDS = ØV
– 0.1
– 0.1
µA
VGS = – 20V, VDS = ØV
TA = 150°C
–6
– 2.5
–6
V
VDS = 15V, ID = 1 nA
15
5
15
mA
VDS = 15V, VGS = ØV
4500 7500 4500 7500
µS
VDS = 15V, VGS = ØV
f = 1 kHz
4000
µS
VDS = 15V, VGS = ØV
f = 400 MHz
5
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source
Output Conductance
gfs
gos
4000
50
50
µS
VDS = 15V, VGS = ØV
f = 1 kHz
75
75
µS
VDS = 15V, VGS = ØV
f = 100 MHz
100
100
µS
VDS = 15V, VGS = ØV
f = 400 MHz
Common Source Input Capacitance
Ciss
4
4
pF
VDS = 15V, VGS = ØV
f = 1 MHz
Common Source Output Capacitance
Coss
2
2
pF
VDS = 15V, VGS = ØV
f = 1 MHz
Common Source
Reverse Transfer Capacitance
Crss
0.8
0.8
pF
VDS = 15V, VGS = ØV
f = 1 MHz
Common Source
Input Conductance
gis
100
100
µS
VDS = 15V, VGS = ØV
f = 100 MHz
1000
1000
µS
VDS = 15V, VGS = ØV
f = 400 MHz
Common Source
Input Susceptance
bis
2500
2500
µS
VDS = 15V, VGS = ØV
f = 100 MHz
10000
10000 µS
VDS = 15V, VGS = ØV
f = 400 MHz
Common Source
Output Susceptance
bos
1000
1000
µS
VDS = 15V, VGS = ØV
f = 100 MHz
4000
4000
µS
VDS = 15V, VGS = ØV
f = 400 MHz
Common Source
Power Gain
Gps
Noise Figure
NF
18
18
dB
VDS = 15V, ID = 5mA
f = 100 MHz
10
10
dB
VDS = 15V, ID = 5mA
f = 400 MHz
VDS = 15V, ID = 5mA
RG = 1kΩ
f = 100 MHz
2
2
dB
4
4
dB
TOÐ72 Package
Surface Mount
See Section G for Outline Dimensions
SMP4416, SMP4416A
f = 400 MHz
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Note: rf parameters guaranteed, but not 100% tested.
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