2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit：ｍｍ 2SC5621 is a super mini package resin sealed silicon NPN 1.5 epitaxial transistor. 0.35 0.8 0.35 0.5 1.7 1.0 FEATURE ・High gain bandwidth product. fT=4.5GHz 0.32 0.5 0.22 It is designed for high frequency voltage application. ① ② ③ ・High gain, low noise. ・Can operate at low voltage. 0.12 0.55 0.7 ・Super mini package for easy mounting. 0～0.1 APPLICATION For TV tuners, High frequency voltage amplifier, Cellular phone system TERMINAL CONNECTOR ①：BASE JEITA：SC-75A ②：EMITTER ③：COLLECTOR MAXIMUM RATINGS（Ta=25℃） Symbol Parameter Ratings Unit VCBO Collector to Base voltage 20 V VCEO Collector to Emitter voltage 12 V VEBO Emitter to Base voltage 3 V IC Collector current 50 mA PC Collector dissipation 100 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ MARKING G W TYPE NAME hFE ITEM ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Parameter Test conditions Unit Typ Max - - 1.0 μA ICBO Collector cut off current IEBO Emitter cut off current VEB=1V, IC=0mA - - 1.0 μA hFE DC forward current gain VCE=5V , IC=20mA 50 - 250 - fT Gain bandwidth product VCE=5V, IE=20mA - 4.5 - GHz Collector output capacitance VCB=5V, IE=0mA , f=1MHz - 1.0 - pF Insertion power gain VCE=5V, IC=20mA , f=1GHz 7.5 9.0 - dB Noise figure VCE=5V, IC=5mA , f=1GHz - 1.5 - dB Cob |S21|2 NF VCB=10V, IE=0mA Limits Min ISAHAYA ELECTRONICS CORPORATION 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE hFE - IC fT - IC 5 VCE=5V Ta=25℃ Gain bandwidth product fT (GHz) DC forward current gain hFE 1000 100 10 1 VCE=5V Ta=25℃ 4 3 2 1 0 0.1 1 10 100 1 10 Collector current IC (mA) Collector current IC (mA) |S21e|2 - IC Cob - Vcb 20 f=1MHz IE=0 Ta=25℃ Insertion power gain |S21e|2 ( dB ) Collector output capacitance Cob (pF) 10 1 VCE=5V Ta=25℃ 15 f=1GHz 5 0 0.1 1 10 100 1 Collector to Base voltage Vcb (V) 10 100 Collector current IC (mA) |S21e|2 - f NF - IC 5 20 VCE=5V IC=20mA Ta=25℃ 15 VCE=5V f=1GHz Ta=25℃ 4 Noise figure NF(dB) Insertion power gain |S21e|2 ( dB ) f=500MHz 10 0.1 10 5 0 100 3 2 1 0 0.1 1 Frequency f (GHz) 10 1 10 Collector current IC (mA) ISAHAYA ELECTRONICS CORPORATION 100 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE VCE=5V/IC=20mA Frequency (MHz) Mag S11 S21 S12 S22 Ang(deg) Mag Ang(deg) Mag Ang(deg) Mag Ang(deg) 500 0.504 -153.8 6.300 89.7 0.065 54.6 0.329 -42.3 600 700 0.492 0.493 -160.7 -166.4 5.314 4.616 85.5 82.0 0.073 0.082 56.7 58.5 0.317 0.304 -41.5 -41.4 800 0.490 -171.4 4.055 78.4 0.089 60.2 0.284 -41.3 900 0.486 -175.1 3.633 74.8 0.098 61.4 0.277 -40.7 1000 1100 0.480 0.483 -178.6 178.2 3.290 3.010 71.8 69.2 0.107 0.115 61.9 62.8 0.272 0.260 -42.1 -42.2 1200 0.485 175.7 2.789 66.3 0.125 63.5 0.260 -44.1 1300 0.487 173.1 2.607 63.2 0.134 63.8 0.262 -45.1 1400 1500 0.485 0.482 170.2 167.7 2.441 2.298 60.4 58.4 0.144 0.153 63.8 63.7 0.259 0.261 -47.1 -49.3 1600 0.485 165.5 2.167 55.9 0.162 63.7 0.256 -50.7 1700 1800 0.487 0.488 163.7 161.0 2.047 1.958 53.7 51.3 0.172 0.181 63.6 63.4 0.255 0.253 -53.4 -55.0 1900 0.488 159.2 1.869 49.2 0.191 63.0 0.256 -58.2 2000 0.486 156.7 1.788 46.8 0.201 62.6 0.256 -60.6 1.0 S11 Smith Chart S21 Polar Chart 2.0 0.5 8 120° 90° 60° 6 f=500MHz 150° 4 0.2 30° 5.0 f=2GHz 0.2 0.0 2 0.5 1.0 f=2GHz ±180° 0° 0 -8 -6 -4 -2 f=500MHz 0 2 4 6 8 -2 -0.2 -5.0 -150° -4 -30° -6 -2.0 -0.5 -120° -90° -1.0 S12 Polar Chart 0.3 9 0 ° S22 Smith Chart 60° 120° f=2GHz 0.2 f=500MHz 0 -0.2 -0.1 2.0 0.5 0.2 0.1 -0.3 1.0 30° 150° ± 180° -60° -8 0 0.1 0.0 0.2 0.2 0.5 1.0 0.3 f=2GHz -0.1 f=500MHz -0.2 -150° -30° -0.2 -120° -60° -0.3 -2.0 -0.5 -90° ISAHAYA ELECTRONICS CORPORATION -1.0 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jun.2013