PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 133 A Ω RDS(on) ≤ 9 mΩ ≤ 150 ns tRR IXFR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 100 V VGS Continous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 133 A ID(RMS) External lead current limit 75 A IDM TC = 25°C, pulse width limited by TJM 400 A IAR TC = 25°C 60 A EAR TC = 25°C 100 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 300 W -55 ... +175 175 -55 ... +150 °C °C °C 2500 V~ 20..120/4.6..20 Nm/lb 5 g TJ TJM Tstg VISOL 50/60 Hz, RMS, 1 minute FC Mounting Force Weight ISOPLUS247 (IXFR) E153432 G z z z VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS IDSS RDS(on) V 5.0 V VGS = ±20 VDC, VDS = 0 ±100 nA VDS = VDSS VGS = 0 V VGS = 0 V 25 250 1000 μA μA μA 9 mΩ mΩ TJ = 150°C TJ = 175°C VGS = 10 V, ID = 100 A, Note 1 VGS = 15 V, ID = 400A, Note 1 © 2006 IXYS All rights reserved 6.0 Fast recovery intrinsic diode Avalanche voltage rated Applications DC-DC converters z 100 D = Drain z Characteristic Values Min. Typ. Max. VGS = 0 V, ID = 250 μA ISOLATED TAB Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z BVDSS S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C unless otherwise specified) D Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly z z z Space savings High power density DS99238E(03/06) IXFR 200N10P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 100 A, Note 1 60 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 97 S 7600 pF 2900 pF 860 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) 30 ns 35 ns 150 ns 90 ns 235 nC 50 nC 135 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 100 A Qgd RthJC ISOPLUS247 Outline 0.5 K/W RthCS 0.15 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 200 A ISM Repetitive 400 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25 A, dI/dt = 100 A/μs 150 ns QRM VR = 50 V, VGS = 0 V 0.4 μC 6 A IRM Notes; 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFR 200N10P Fig. 1. Output Characte r is tics @ 25ºC Fig. 2. Exte nde d Output Characte r is tics @ 25ºC 350 200 V GS = 10V 9V 175 V GS = 10V 300 9V 250 I D - Amperes I D - Amperes 150 8V 125 100 75 7V 200 8V 150 7V 100 50 6V 25 50 0 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 0.5 1 1.5 Fig. 3. Output Characte r is tics @ 150ºC 3 3.5 4 4.5 5 2.4 V GS = 10V 9V V GS = 10V 2.2 150 R D S ( o n ) - Normalized 175 I D - Amperes 2.5 Fig. 4. RDS(on ) Norm alize d to ID = 100A V alue vs . Junction Te m pe r atur e 200 8V 125 100 7V 75 6V 50 25 2 1.8 I D = 200A 1.6 1.4 I D = 100A 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 V D S - V olts 90 2.2 80 TJ = 175 ºC I D - Amperes 1.6 V GS = 10V V GS = 15V - - - - 1.2 75 100 125 150 175 TJ = 25 ºC 1 Ex ternal Lead Current limit 70 1.8 1.4 50 Fig . 6. Dr ain C u r r e n t vs . Cas e T e m p e r atu r e 2.4 2 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to ID = 100A V alue vs . Drain Curr e nt R D S ( o n ) - Normalized 2 V D S - V olts V D S - V olts 60 50 40 30 20 0.8 10 0.6 0 0 50 100 150 200 I D - A mperes © 2006 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFR 200N10P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 300 140 250 120 - Siemens TJ = 150 ºC 100 25 ºC 150 ºC 60 fs 150 TJ = -40 ºC 80 g I D - Amperes 100 200 25 ºC 40 -40 ºC 50 20 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 9 50 100 V G S - V olts Fig. 9. Sour ce Curr e nt vs . Source -To-Drain V oltage 200 250 300 350 Fig. 10. Gate Charge 10 350 9 V DS = 50V 8 I D = 100A 300 250 I G = 10m A 7 V G S - Volts I S - Amperes 150 I D - A mperes 200 150 100 6 5 4 3 TJ = 150 ºC 2 50 TJ = 25 ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 25 50 V S D - V olts 100 125 150 175 200 225 250 Fig . 12. Fo r w ar d -Bias Safe Op e r atin g A r e a Fig. 11. Capacitance 1000 100,000 f = 1MH z T J = 1 7 5 ºC R D S (o n ) L im it C iss 10,000 I D - Amperes Capacitance - picoFarads 75 Q G - nanoCoulombs C oss C rss 1,000 TC = 2 5 ºC 1 0 0 µs 100 1m s 10m s DC 10 100 0 5 10 15 20 25 30 35 40 V DS - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 VD S - V olts 1000 IXFR 200N10P Fig. 13. Maximum Transient Thermal Resistance R( t h ) J C - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2006 IXYS All rights reserved IXYS REF: T_200N10P (88) 03-22-06-E.xls