IXYS IXTK140N20P

Advanced Technical Information
PolarHTTM
Power MOSFET
IXTK 140N20P
VDSS
ID25
RDS(on)
= 200 V
= 140 A
Ω
= 18 mΩ
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
VGSM
ID25
TC = 25°C
ID(RMS)
External lead current limit
IDM
TC = 25°C, pulse width limited by TJM
IAR
200
200
V
V
±20
V
140
A
75
A
280
A
TC = 25°C
60
A
EAR
TC = 25°C
100
mJ
EAS
TC = 25°C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
10
V/ns
PD
TC = 25°C
800
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300
°C
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
G
1.13/10 Nm/lb.in.
Weight
10
g
D = Drain
TAB = Drain
z
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
Easy to mount
Space savings
High power density
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
200
VGS(th)
VDS = VGS, ID = 500µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 140A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
(TAB)
S
Features
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
D
G = Gate
S = Source
z
TJ
TJM
Tstg
TL
TO-264(SP) (IXTK)
V
TJ = 150°C
14
5.0
V
±200
nA
25
250
µA
µA
18
mΩ
mΩ
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99194(07/04)
IXTK 140N20P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
50
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
td(off)
RG = 3.3 Ω (External)
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
84
S
7500
pF
1800
pF
280
pF
30
ns
35
ns
150
ns
90
ns
240
nC
50
nC
100
nC
RthJC
0.18 K/W
RthCK
0.15
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
140
A
ISM
Repetitive
280
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
QRM
TO-264(SP) Outline (IXTK)
120
ns
3.5
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
IXTK 140N20P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
300
140
VGS = 10V
9V
8V
120
9V
240
100
210
I D - Amperes
I D - Amperes
VGS = 10V
270
80
7V
60
40
6V
8V
180
150
120
7V
90
60
20
6V
30
5V
0
0
0
0.5
1
1.5
2
0
2.5
1
2
3
V D S - Volts
Fig. 3. Output Characteristics
@ 150ºC
4
5
6
V D S - Volts
7
8
9
10
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Te m perature
140
VGS = 10V
9V
8V
3
R D S ( o n ) - Normalized
120
I D - Amperes
100
7V
80
60
40
6V
20
5V
VGS = 10V
2.5
I D = 140A
2
I D = 70A
1.5
1
0
0.5
0
1
2
3
4
V D S - Volts
5
-50
6
-25
Fig. 5. RDS(on) Norm alized to 0.5 ID25
Value vs . Drain Curre nt
25
50
75
100
125
TJ - Degrees Centigrade
150
175
Fig. 6. Drain Curre nt vs . Cas e
Tem pe rature
90
4
TJ = 175ºC
External Lead Current Limit
80
3.5
70
3
2.5
I D - Amperes
R D S ( o n ) - Normalized
0
VGS = 10V
VGS = 15V
2
60
50
40
30
1.5
20
1
10
TJ = 25ºC
0
0.5
0
50
100
150
200
I D - Amperes
© 2004 IXYS All rights reserved
250
300
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
150
175
IXTK 140N20P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
120
225
110
200
100
90
150
g f s - Siemens
I D - Amperes
175
125
100
80
70
50
25ºC
40
150ºC
75
TJ = 150ºC
50
25ºC
30
-40ºC
20
25
TJ = -40ºC
60
10
0
0
4
4.5
5
5.5
6
6.5
7
7.5
0
8
40
80
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
200
240
10
300
250
9
VDS = 100V
8
I D = 70A
I G = 10mA
VG S - Volts
7
200
150
6
5
4
3
100
TJ = 150ºC
2
50
TJ = 25ºC
1
0
0
0.4
0.6
0.8
1
1.2
V S D - Volts
1.4
0
25
50
75
100 125 150 175 200 225 250
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
100,000
1000
TJ = 175ºC
f = 1MHz
TC = 25ºC
R DS(on) Limit
Ciss
10,000
I D - Amperes
Capacitance - picoFarads
160
Fig. 10. Gate Charge
350
I S - Amperes
120
I D - Amperes
Coss
25µs
100µs
100
1,000
1ms
Crss
10ms
DC
100
10
0
5
10
15
20
25
V DS - Volts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
1000
IXTK 140N20P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
R( t h ) J C - ºC / W
1.00
0.10
0.01
0.00
0.1
1
10
Pu ls e W id th - m illis e c o n d s
© 2004 IXYS All rights reserved
100
1000