DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE μ PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PIN CONNECTION (Top View) DESCRIPTION The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. 6 5 4 1 2 3 The μ PA2680T1E incorporates a MOSFET which features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky Barrier Diode, and is suitable for applications such as DC/DC converter of portable machine and so on. FEATURES • 4.5 V drive available MOSFET • Low on-state resistance MOSFET RDS(on)1 = 38 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 44 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) 1: Anode 2: Source/Cathode (Heat sink 2) 3: Gate 4: Drain (Heat sink 1) 5: Source/Cathode (Heat sink 2) 6: Anode • Low forward voltage Schottky Barrier Diode VF = 0.36 V TYP. (IF = 1.0 A) ORDERING INFORMATION PART NUMBER PACKAGE μ PA2680T1E 6LD3x3MLP Marking: A2680 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = ±150 V TYP. (C = 200 pF, R = 0 Ω, Single Pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G17661EJ2V0DS00 (2nd edition) Date Published May 2007 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2006 μ PA2680T1E ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) MOSFET Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Note1 Drain Current (DC) Note2 Drain Current (pulse) Note1 Total Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 ±12 ±3.0 ±12.0 1.3 150 −55 to +150 V V A A W °C °C 2 Notes 1. Mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board 2 2 (Cu pad: 322 mm x 70 μm, FR-4: 1452 mm x 1.6 mmt) 2. PW ≤ 10 μs, Duty Cycle ≤ 1% Schottky Barrier Diode Repetitive Peak Reverse Voltage Note Average Forward Current Note Total Power Dissipation Junction Temperature Storage Temperature VRRM IF PT TJ Tstg 20 1.8 1.2 125 −55 to +150 V A W °C °C Note Square wave, Duty Cycle = 50% 2 Mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board 2 2 (Cu pad: 322 mm x 70 μm, FR-4: 1452 mm x 1.6 mmt) 2 SBD side: 85°C/W when mounted on a 1 in pad of 2 oz copper 2 FET side: 97°C/W when mounted on a 1 in pad of 2 oz copper 2 Data Sheet G17661EJ2V0DS μ PA2680T1E ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) MOSFET CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 1 μA ±10 μA 2.0 V Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V VGS(th) VDS = VGS, ID = 0.25 mA 0.6 | yfs | VDS = 10 V, ID = 1.5 A 1.0 RDS(on)1 VGS = 10 V, ID = 3.0 A 38 50 mΩ RDS(on)2 VGS = 4.5 V, ID = 3.0 A 44 60 mΩ Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note 3.6 S Input Capacitance Ciss VDS = 10 V, 190 pF Output Capacitance Coss VGS = 0 V, 90 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 33 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 1.5 A, 9.0 ns Rise Time tr VGS = 4.5 V, 7.0 ns Turn-off Delay Time td(off) RG = 10 Ω 16 ns Fall Time tf 4.0 ns Total Gate Charge QG VDD = 16 V, 3.1 nC Gate to Source Charge QGS VGS = 4.5 V, 0.6 nC QGD ID = 2.0 A 1.1 nC VF(S-D) IF = 3.0 A, VGS = 0 V 0.85 V Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL RG PG. VGS VGS Wave Form 0 VGS 10% D.U.T. 90% RL 50 Ω VDD VDD 90% ID 90% PG. ID VGS 0 IG = 2 mA 0 10% ID 10% Wave Form td(on) τ tr td(off) ton τ = 1 μs Duty Cycle ≤ 1% tf toff Schottky Barrier Diode CHARACTERISTICS SYMBOL TEST CONDITIONS Forward Voltage VF IF = 1.0 A Reverse Current IR VR = 5 V, TA = 100°C Terminal Capacitance CT f = 1.0 MHz, VR = 10 V Data Sheet G17661EJ2V0DS MIN. TYP. MAX. UNIT 0.36 0.39 V 15 mA 36 pF 3 μ PA2680T1E MOSFET TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 Mounted on FR-4 board of 1452 mm2 x 1.6 mmt 1.25 1 0.75 0.5 0.25 0 0 0 25 50 75 100 125 150 175 0 25 TA - Ambient Temperature - °C 50 75 100 ID - Drain Current - A 100 10 R (V n) GS d it e Lim V ) 5 . =4 ID(pulse) PW ID(DC) =1 i m s i 1 10 ms 100 ms 0.1 DC Single Pulse Mounted on FR-4 board of 1452 mm2 x 1.6 mmt 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V rth(J-A) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 4 1000 MOSFET 100 SBD 10 1 0.1 100 μ Single Pulse 2 Mounted on FR-4 board of 1452 mm x 1.6 mmt Cu pad of 645 mm2 x 70 μm (1 in2) 1m 150 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA (o DS 125 10 m 100 m 1 PW - Pulse Width - s Data Sheet G17661EJ2V0DS 10 100 1000 175 μ PA2680T1E DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 10 15 10 4.5 V ID - Drain Current - A ID - Drain Current - A 1 VGS = 10 V 2.5 V 5 TA = 125°C 75°C 25°C −25°C 0.1 0.01 0.001 VDS = 10 V Pulsed Pulsed 0 0.0001 0 0.2 0.4 0.6 0.8 0 VDS - Drain to Source Voltage - V 1.1 0.9 0.7 0.5 0 25 50 75 100 125 150 VGS(off) – Gate to Source Cut-off Voltage - V VDS = VGS ID = 0.25 mA -25 1.5 2 2.5 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.5 VDS = 10 V ID = 1 mA 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 Tch - Channel Temperature - °C Tch - Channel Temperature - °C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 TA = −25°C 25°C 75°C 125°C 1 VDS = 10 V Pulsed 0.1 0.01 0.1 1 10 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S 1.5 -50 1 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 1.3 0.5 100 80 VGS = 2.5 V 60 4.5 V 40 10 V 20 Pulsed 0 0.01 0.1 1 10 ID - Drain Current - A ID - Drain Current - A Data Sheet G17661EJ2V0DS 5 μ PA2680T1E 140 1.5 A 120 Pulsed ID = 3.0 A 100 80 60 40 20 0 0 2 4 6 8 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 ID = 3.0 A Pulsed 80 VGS = 4.5 V 60 10 V 40 20 0 -50 -25 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF Ciss 100 Coss Crss 100 125 150 VDD = 10 V VGS = 4.5 V RG = 10 Ω td(off) td(on) 10 tr tf 1 0.1 1 10 100 0.1 1 10 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT CHARACTERISTICS 6 10 VGS = 0 V Pulsed ID = 2.0 A 4 IF - Diode Forward Current - A VGS - Gate to Source Voltage - V 75 SWITCHING CHARACTERISTICS VDS - Drain to Source Voltage - V VDD = 10 V 4V 16 V 2 1 0.1 0.01 0 0 0.5 1 1.5 2 2.5 3 0.4 0.6 0.8 VF(S-D) - Source to Drain Voltage - V QG - Gate Charge - nC 6 50 100 VGS = 0 V f = 1.0 MHz 10 0.01 25 Tch - Channel Temperature - °C VGS - Gate to Source Voltage - V 1000 0 Data Sheet G17661EJ2V0DS 1 μ PA2680T1E SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) FORWARD CURRENT vs. FORWARD VOLTAGE <R> REVERSE CURRENT vs. REVERSE VOLTAGE 100 10 1 IR - Reverse Current - mA IF - Forward Current - A TA = 125°C TA = 125°C 75°C 25°C −25°C 0.1 10 100°C 75°C 1 0.1 25°C 0.01 0.01 0 0.2 0.4 0.6 0.8 1 0 5 10 15 20 VR - Reverse Voltage - V VF - Forward Voltage - V TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 1000 CT - Terminal Capacitance - pF f = 1.0 MHz 100 10 0.1 1 10 100 VR - Reverse Voltage - V Data Sheet G17661EJ2V0DS 7 μ PA2680T1E PACKAGE DRAWING (Unit: mm) 3 0.2 RFE 3 A B +0.03 0.02 −0.02 2x 0.15 C C 0.15 C 2 x 2 0.95 PIN CONNECTION 0.75 0.4 5 1 0.95 0.05 6 1.1 6x 0.08 C 0.1 0.2 MIN. 0.1 C Heat sink 2 0.4 ±0.05 0.9 ±0.1 0.4 ±0.05 4 8 3 1.6 ±0.05 Heat sink 1 Data Sheet G17661EJ2V0DS 1: Anode 2: Source/Cathode (Heat sink 2) 3: Gate 4: Drain (Heat sink 1) 5: Source/Cathode (Heat sink 2) 6: Anode μ PA2680T1E • The information in this document is current as of May, 2007. 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