NEC UPA2680T1E

DATA SHEET
MOSFET WITH SCHOTTKY BARRIER DIODE
μ PA2680T1E
N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING
PIN CONNECTION (Top View)
DESCRIPTION
The μ PA2680T1E is a switching device, which can be driven
directly by a 4.5 V power source.
6
5
4
1
2
3
The μ PA2680T1E incorporates a MOSFET which features a
low on-state resistance and excellent switching characteristics
and a low forward voltage Schottky Barrier Diode, and is
suitable for applications such as DC/DC converter of portable
machine and so on.
FEATURES
• 4.5 V drive available MOSFET
• Low on-state resistance MOSFET
RDS(on)1 = 38 mΩ TYP. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 44 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
1: Anode
2: Source/Cathode (Heat sink 2)
3: Gate
4: Drain (Heat sink 1)
5: Source/Cathode (Heat sink 2)
6: Anode
• Low forward voltage Schottky Barrier Diode
VF = 0.36 V TYP. (IF = 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ PA2680T1E
6LD3x3MLP
Marking: A2680
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±150 V TYP. (C = 200 pF, R = 0 Ω, Single Pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17661EJ2V0DS00 (2nd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
μ PA2680T1E
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
MOSFET
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Note1
Drain Current (DC)
Note2
Drain Current (pulse)
Note1
Total Power Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
20
±12
±3.0
±12.0
1.3
150
−55 to +150
V
V
A
A
W
°C
°C
2
Notes 1. Mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board
2
2
(Cu pad: 322 mm x 70 μm, FR-4: 1452 mm x 1.6 mmt)
2. PW ≤ 10 μs, Duty Cycle ≤ 1%
Schottky Barrier Diode
Repetitive Peak Reverse Voltage
Note
Average Forward Current
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
VRRM
IF
PT
TJ
Tstg
20
1.8
1.2
125
−55 to +150
V
A
W
°C
°C
Note Square wave, Duty Cycle = 50%
2
Mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board
2
2
(Cu pad: 322 mm x 70 μm, FR-4: 1452 mm x 1.6 mmt)
2
SBD side: 85°C/W when mounted on a 1 in pad of 2 oz copper
2
FET side: 97°C/W when mounted on a 1 in pad of 2 oz copper
2
Data Sheet G17661EJ2V0DS
μ PA2680T1E
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
MOSFET
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
1
μA
±10
μA
2.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
VGS(th)
VDS = VGS, ID = 0.25 mA
0.6
| yfs |
VDS = 10 V, ID = 1.5 A
1.0
RDS(on)1
VGS = 10 V, ID = 3.0 A
38
50
mΩ
RDS(on)2
VGS = 4.5 V, ID = 3.0 A
44
60
mΩ
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
3.6
S
Input Capacitance
Ciss
VDS = 10 V,
190
pF
Output Capacitance
Coss
VGS = 0 V,
90
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
33
pF
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 1.5 A,
9.0
ns
Rise Time
tr
VGS = 4.5 V,
7.0
ns
Turn-off Delay Time
td(off)
RG = 10 Ω
16
ns
Fall Time
tf
4.0
ns
Total Gate Charge
QG
VDD = 16 V,
3.1
nC
Gate to Source Charge
QGS
VGS = 4.5 V,
0.6
nC
QGD
ID = 2.0 A
1.1
nC
VF(S-D)
IF = 3.0 A, VGS = 0 V
0.85
V
Gate to Drain Charge
Body Diode Forward Voltage
Note
Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RL
RG
PG.
VGS
VGS
Wave Form
0
VGS
10%
D.U.T.
90%
RL
50 Ω
VDD
VDD
90%
ID
90%
PG.
ID
VGS
0
IG = 2 mA
0 10%
ID
10%
Wave Form
td(on)
τ
tr
td(off)
ton
τ = 1 μs
Duty Cycle ≤ 1%
tf
toff
Schottky Barrier Diode
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Forward Voltage
VF
IF = 1.0 A
Reverse Current
IR
VR = 5 V, TA = 100°C
Terminal Capacitance
CT
f = 1.0 MHz, VR = 10 V
Data Sheet G17661EJ2V0DS
MIN.
TYP.
MAX.
UNIT
0.36
0.39
V
15
mA
36
pF
3
μ PA2680T1E
MOSFET TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.5
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
Mounted on FR-4 board of
1452 mm2 x 1.6 mmt
1.25
1
0.75
0.5
0.25
0
0
0
25
50
75
100
125
150
175
0
25
TA - Ambient Temperature - °C
50
75
100
ID - Drain Current - A
100
10
R
(V
n)
GS
d
it e
Lim V )
5
.
=4
ID(pulse)
PW
ID(DC)
=1
i
m
s
i
1
10 ms
100 ms
0.1
DC
Single Pulse
Mounted on FR-4 board of
1452 mm2 x 1.6 mmt
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
rth(J-A) - Transient Thermal Resistance - °C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
4
1000
MOSFET
100
SBD
10
1
0.1
100 μ
Single Pulse
2
Mounted on FR-4 board of 1452 mm x 1.6 mmt
Cu pad of 645 mm2 x 70 μm (1 in2)
1m
150
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
(o
DS
125
10 m
100 m
1
PW - Pulse Width - s
Data Sheet G17661EJ2V0DS
10
100
1000
175
μ PA2680T1E
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
10
15
10
4.5 V
ID - Drain Current - A
ID - Drain Current - A
1
VGS = 10 V
2.5 V
5
TA = 125°C
75°C
25°C
−25°C
0.1
0.01
0.001
VDS = 10 V
Pulsed
Pulsed
0
0.0001
0
0.2
0.4
0.6
0.8
0
VDS - Drain to Source Voltage - V
1.1
0.9
0.7
0.5
0
25
50
75
100 125 150
VGS(off) – Gate to Source Cut-off Voltage - V
VDS = VGS
ID = 0.25 mA
-25
1.5
2
2.5
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.5
VDS = 10 V
ID = 1 mA
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75
100 125 150
Tch - Channel Temperature - °C
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
TA = −25°C
25°C
75°C
125°C
1
VDS = 10 V
Pulsed
0.1
0.01
0.1
1
10
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS(th) - Gate to Source Threshold Voltage - V
| yfs | - Forward Transfer Admittance - S
1.5
-50
1
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
1.3
0.5
100
80
VGS = 2.5 V
60
4.5 V
40
10 V
20
Pulsed
0
0.01
0.1
1
10
ID - Drain Current - A
ID - Drain Current - A
Data Sheet G17661EJ2V0DS
5
μ PA2680T1E
140
1.5 A
120
Pulsed
ID = 3.0 A
100
80
60
40
20
0
0
2
4
6
8
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
ID = 3.0 A
Pulsed
80
VGS = 4.5 V
60
10 V
40
20
0
-50 -25
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
Ciss
100
Coss
Crss
100 125 150
VDD = 10 V
VGS = 4.5 V
RG = 10 Ω
td(off)
td(on)
10
tr
tf
1
0.1
1
10
100
0.1
1
10
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DYNAMIC INPUT CHARACTERISTICS
6
10
VGS = 0 V
Pulsed
ID = 2.0 A
4
IF - Diode Forward Current - A
VGS - Gate to Source Voltage - V
75
SWITCHING CHARACTERISTICS
VDS - Drain to Source Voltage - V
VDD = 10 V
4V
16 V
2
1
0.1
0.01
0
0
0.5
1
1.5
2
2.5
3
0.4
0.6
0.8
VF(S-D) - Source to Drain Voltage - V
QG - Gate Charge - nC
6
50
100
VGS = 0 V
f = 1.0 MHz
10
0.01
25
Tch - Channel Temperature - °C
VGS - Gate to Source Voltage - V
1000
0
Data Sheet G17661EJ2V0DS
1
μ PA2680T1E
SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
FORWARD CURRENT vs. FORWARD VOLTAGE
<R>
REVERSE CURRENT vs. REVERSE VOLTAGE
100
10
1
IR - Reverse Current - mA
IF - Forward Current - A
TA = 125°C
TA = 125°C
75°C
25°C
−25°C
0.1
10
100°C
75°C
1
0.1
25°C
0.01
0.01
0
0.2
0.4
0.6
0.8
1
0
5
10
15
20
VR - Reverse Voltage - V
VF - Forward Voltage - V
TERMINAL CAPACITANCE vs. REVERSE VOLTAGE
1000
CT - Terminal Capacitance - pF
f = 1.0 MHz
100
10
0.1
1
10
100
VR - Reverse Voltage - V
Data Sheet G17661EJ2V0DS
7
μ PA2680T1E
PACKAGE DRAWING (Unit: mm)
3
0.2 RFE
3
A B
+0.03
0.02 −0.02
2x
0.15 C
C
0.15 C 2 x
2
0.95
PIN CONNECTION
0.75
0.4
5
1
0.95
0.05
6
1.1
6x
0.08 C
0.1
0.2 MIN.
0.1 C
Heat sink 2
0.4 ±0.05
0.9 ±0.1
0.4 ±0.05
4
8
3
1.6 ±0.05
Heat sink 1
Data Sheet G17661EJ2V0DS
1: Anode
2: Source/Cathode (Heat sink 2)
3: Gate
4: Drain (Heat sink 1)
5: Source/Cathode (Heat sink 2)
6: Anode
μ PA2680T1E
• The information in this document is current as of May, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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M8E 02. 11-1