DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on. 0 to 0.1 1 2 3 • 1.8 V drive available (MOS FET) • Low on-state resistance (MOS FET) RDS(on)1 = 68 mΩ TYP. (VGS = −4.5 V, ID = −1.0 A) RDS(on)2 = 84 mΩ TYP. (VGS = −2.5 V, ID = −1.0 A) RDS(on)3 = 109 mΩ TYP. (VGS = −1.8 V, ID = −1.0 A) • Low forward voltage (Schottky barrier diode) VF = 0.35 V TYP. (IF = 1.0 A) 0.95 1.9 PART NUMBER PACKAGE µ PA507TE SC-95_5p (Mini Mold Thin Type) 0.9 to 1.1 2.9 ±0.2 ★ ORDERING INFORMATION 0.65 0.95 0.4 FEATURES PIN CONNECTION (Top View) 5 4 Marking: ZA 1 2 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD ± 100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16626EJ1V1DS00 (1st edition) Date Published December 2003 NS CP(K) Printed in Japan The mark ★ shows major revised points. 2003 µ PA507TE MOS FET ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m8 V Drain Current (DC) ID(DC) m2 A ID(pulse) m8 A PT 0.57 W Tch 150 °C Drain Current (pulse) Note1 Total Power Dissipation Note2 Channel Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 2500 mm2 x 1.6 mm, t ≤ 5 sec. SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Repetitive Peak Reverse Voltage VRRM 30 V IF(AV) 1 A IFSM 10 A Junction Temperature Tj +125 °C Storage Temperature Tstg −55 to +125 °C Average Forward Current Surge Current Note3 Note4 Notes 3. Mounted on FR-4 board of 2500 mm2 x 1.6 mm, t ≤ 5 sec 4. 50 Hz sine wave, 1 cycle 2 Data Sheet G16626EJ1V1DS µ PA507TE MOS FET ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1 µA Gate Leakage Current IGSS VGS = m 8 V, VDS = 0 V m10 µA −1.50 V Gate Cut-off Voltage Forward Transfer Admittance VDS = −10 V, ID = −1.0 mA VGS(off) Note Drain to Source On-state Resistance Note −0.45 −0.75 2.0 4.3 | yfs | VDS = −10 V, ID = −1.0 A RDS(on)1 VGS = −4.5 V, ID = −1.0 A 68 85 mΩ RDS(on)2 VGS = −2.5 V, ID = −1.0 A 84 120 mΩ RDS(on)3 VGS = −1.8 V, ID = −1.0 A 109 180 mΩ S Input Capacitance Ciss VDS = −10 V 380 pF Output Capacitance Coss VGS = 0 V 85 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 45 pF Turn-on Delay Time td(on) VDD = −10 V, ID = −1.0 A 10 ns VGS = −4.0 V 5 ns RG = 10 Ω 47 ns 28 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −16 V 4.7 nC Gate to Source Charge QGS VGS = −4.0 V 0.9 nC QGD ID = −2.0 A 1.5 nC IF = 2.0 A, VGS = 0 V 0.84 V Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% SCHOTTKY BARRIER DIODE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Forward Voltage VF IF = 1.0 A Reverse Current IR VR = 10 V Terminal Capacitance CT f = 1.0 MHz, VR = 10 V TEST CIRCUIT 1 SWITCHING TIME MIN. UNIT 0.35 0.38 V 200 µA pF TEST CIRCUIT 2 GATE CHARGE D.U.T. VGS(−) RL VGS RG MAX. 36 D.U.T. PG. TYP. Wave Form VDD 0 VGS 10% IG = −2 mA RL 50 Ω VDD 90% PG. VDS(−) 90% VGS(−) 0 90% VDS VDS τ τ = 1 µs Duty Cycle ≤ 1% 10% 0 10% Wave Form td(on) tr ton td(off) tf toff Data Sheet G16626EJ1V1DS 3 µ PA507TE MOS FET TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.7 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on FR-4 board of 2 2500 mm x 1.6 mm 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A R DS(on) Lim ited (at V GS = −4.5 V) ID(pulse) - 10 PW = 1 m s ID(DC) -1 10 m s 100 m s - 0.1 Single pulse Mounted on FR-4 board of 2 2500 m m x 1.6 m m - 0.01 - 0.1 -1 5s - 10 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 1000 100 10 1 100 µ Single pulse Mounted on FR-4 board of 2 2500 mm x 1.6 mm PD (FET) : P (SBD) = 1: 0 1m 10 m 100 m 1 PW - Pulse Width - s 4 150 TA - Ambient Temperature - °C TA - Ambient Temperature - °C - 100 125 Data Sheet G16626EJ1V1DS 10 100 1000 175 µ PA507TE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 10 Pulsed −2.5 V -6 −1.8 V -4 -2 -1 T A = 125°C 75°C 25°C −25°C - 0.1 - 0.01 - 0.001 - 0.0001 0 - 0.2 - 0.4 - 0.6 - 0.8 0 -1 - 0.8 - 0.7 - 0.6 - 0.5 - 0.4 - 50 0 50 100 150 10 VDS = −10 V Pulsed T A = −25°C 25°C 75°C 125°C 1 0.1 - 0.01 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed V GS = −1.8 V −2.5 V −4.5 V 100 50 - 0.1 -1 ID - Drain Current - A - 0.1 -1 - 10 ID - Drain Current - A - 10 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ -2 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT - 0.9 0 - 0.01 - 1.5 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE V DS = −10 V ID = −1.0 mA 150 -1 VGS - Gate to Source Voltage - V -1 200 - 0.5 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S 0 VGS(off) - Gate Cut-off Voltage - V V DS = −10 V Pulsed VGS = −4.5 V ID - Drain Current - A ID - Drain Current - A -8 FORWARD TRANSFER CHARACTERISTICS Data Sheet G16626EJ1V1DS DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 ID = −1.0 A Pulsed 150 100 50 0 0 -2 -4 -6 -8 VGS - Gate to Source Voltage - V 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 200 ID = −1.0 A Pulsed Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ µ PA507TE V GS = −1.8 V −2.5 V −4.5 V 150 100 50 0 - 50 0 50 100 V GS = 0 V f = 1.0 MHz C iss 100 C oss C rss 10 - 0.01 150 SWITCHING CHARACTERISTICS VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns td(off) tf td(on) tr VDD = −10 V VGS = −4.0 V RG = 10 Ω 1 - 0.1 -1 10 IF - Diode Forward Current - A Pulsed 1 VGS = 0 V 0.1 0.01 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V 6 - 100 ID = −1.0 A -3 VDD = −4.0 V −10 V −16 V -2 -1 0 1 2 3 QG - Gate Change - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0.6 - 10 0 - 10 ID - Drain Current - A 0.4 -1 DYNAMIC INPUT CHARACTERISTICS -4 100 10 - 0.1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C Data Sheet G16626EJ1V1DS 4 5 µ PA507TE SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD CURRENT vs. FORWARD VOLTAGE REVERSE CURRENT vs. REVERSE VOLTAGE 10 100 1 IR - Reverse Current - mA IF - Forward Current - A Pulsed T A = 125°C 75°C 25°C −25°C 0.1 T A = 125°C P ulsed 10 75°C 1 25°C 0.1 0.01 − 25°C 0.001 0.01 0.0001 0 0.2 0.4 0.6 0.8 1 VF - Forward Voltage - V 0 10 20 30 40 VR - Reverse Voltage - V TERMINAL CAPACITANCE vs. REVERSE VOLTAGE CT - Terminal Capacitance - pF 1000 f = 1.0 MHz 100 10 0.1 1 10 100 VR - Reverse Voltage - V Data Sheet G16626EJ1V1DS 7 µ PA507TE • The information in this document is current as of December, 2003. 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