NSC DS91M047TMA

DS91M047
125 MHz Quad M-LVDS Line Driver
General Description
Features
The DS91M047 is a high-speed quad M-LVDS line driver designed for driving clock or data signals to up to four multipoint
networks.
M-LVDS (Multipoint LVDS) is a new family of bus interface
devices based on LVDS technology specifically designed for
multipoint and multidrop cable and backplane applications. It
differs from standard LVDS in providing increased drive current to handle double terminations that are required in multipoint applications. Controlled transition times minimize reflections that are common in multipoint configurations due to
unterminated stubs.
The DS91M047 accepts LVTTL/LVCMOS input levels and
translates them to M-LVDS signal levels with transition times
of greater than 1 ns. The device provides the DE and DE inputs that are ANDed together and control the TRI-STATE
outputs. The DE and DE inputs are common to all four drivers.
The DS91M047 has a flow-through pinout for easy PCB layout. The DS91M047 provides a new alternative for high speed
multipoint interface applications. It is packaged in a space
saving SOIC-16 package.
■ DC - 125 MHz / 250 Mbps low jitter, low skew, low power
■
■
■
■
■
■
operation
Conforms to TIA/EIA-899 M-LVDS Standard
Controlled transition times (2 ns typ) minimize reflections
8 kV ESD on M-LVDS pins protects adjoining components
Flow-through pinout simplifies PCB layout
Industrial operating temperature range (−40°C to +85°C)
Available in a space saving SOIC-16 package
Applications
■ Multidrop / Multipoint clock and data distribution
■ High-Speed, Low Power, Short-Reach alternative to
TIA/EIA-485/422
■ Clock distribution in AdvancedTCA (ATCA) and MicroTCA
(μTCA, uTCA) backplanes
Typical Application
20024002
© 2009 National Semiconductor Corporation
200240
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DS91M047 125 MHz Quad M-LVDS Line Driver
November 9, 2009
DS91M047
Ordering Information
Operating Temperature
Package Type / Number
Order Number
−40°C to +85°C
SOIC/M16A
DS91M047TMA
Connection Diagrams
20024001
20024003
Pin Descriptions
Pin No.
Name
Description
2, 3, 6, 7
DI
Driver input pin, LVCMOS compatible.
10, 11, 14, 15
A
Non-inverting driver output pin, M-LVDS levels.
9, 12, 13, 16
B
Inverting driver output pin, M-LVDS levels.
1
DE
Driver enable pin: When DE is low, the driver is disabled. When DE is high and DE is low or open,
the driver is enabled. If both DE and DE are open circuit, then the driver is disabled.
8
DE
Driver enable pin: When DE is high, the driver is disabled. When DE is low or open and DE is high,
the driver is enabled. If both DE and DE are open circuit, then the driver is disabled.
4
VDD
Power supply pin, +3.3V ± 0.3V
5
GND
Ground pin
Truth Table
Enables
Input
DE
DE
H
L
DI
All other combinations of ENABLE inputs
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2
Outputs
A
B
H
L
L
H
H
L
X
Z
Z
ESD Susceptibility
HBM
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
CDM
Power Supply Voltage
−0.3V to +4V
LVCMOS Input Voltage
−0.3V to (VDD + 0.3V)
M-LVDS Output Voltage
−1.9V to +5.5V
M-LVDS Output Short Circuit
Current Duration
Continuous
Junction Temperature
+140°C
Storage Temperature Range
−65°C to +150°C
Lead Temperature Range
Soldering (4 sec.)
+260°C
Maximum Package Power Dissipation @ +25°C
MA Package
2.21W
Derate MA Package
19.2 mW/°C above +25°C
Package Thermal Resistance (4-Layer, 2 oz. Cu, JEDEC)
θJA
+52°C/W
θJC
+19°C/W
≥8 kV
≥250V
≥1250V
MM
Note 1: Human Body Model, applicable std. JESD22-A114C
Note 2: Machine Model, applicable std. JESD22-A115-A
Note 3: Field Induced Charge Device Model, applicable std.
JESD22-C101-C
Recommended
OperatingConditions
Min Typ Max Units
+3.0 +3.3 +3.6
V
−1.4
+3.8
V
Supply Voltage (VDD)
Voltage at Any Bus Terminal
(Separate or Common-Mode)
High Level Input Voltage (VIH)
2.0
Low Level Input Voltage (VIL)
0
Operating Free Air
Temperature (TA)
−40
+25
VDD
0.8
V
V
+85
°C
DC Electrical Characteristics
(Note 5, Note 6, Note 7, Note 9)
Over supply voltage and operating temperature ranges, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VDD
V
LVCMOS DC Specifications
VIH
High-Level Input Voltage
2.0
VIL
Low-Level Input Voltage
0.8
V
IIH
High-Level Input Current
VIH = 3.6V
-15
±1
15
μA
IIL
Low-Level Input Current
VIL = 0V
-15
±1
15
μA
VCL
Input Clamp Voltage
IIN = -18 mA
-1.5
GND
V
M-LVDS DC Specifications
|VAB|
Differential Output Voltage Magnitude
ΔVAB
Change in Differential Output Voltage Magnitude
Between Logic States
VOS(SS)
Steady-State Common-Mode Output Voltage
|ΔVOS(SS)|
Change in Steady-State Common-Mode Output
Voltage Between Logic States
VA(OC)
Maximum Steady-State Open-Circuit Output Voltage
VB(OC)
Maximum Steady-State Open-Circuit Output Voltage
VP(H)
Voltage Overshoot, Low-to-High Level Output
(Note 10)
VP(L)
Voltage Overshoot, High-to-Low Level Output
(Note 10)
IOS
Output Short-Circuit Current (Note 8)
RL = 50Ω, CL = 5 pF
Figures 1, 3
Figures 1, 2
RL = 50Ω
Figure 4
IB
IAB
650
mV
−50
50
mV
2.10
V
0
50
mV
0
2.4
V
0
2.4
V
0.30
RL = 50Ω, CL = 5 pF
CD = 0.5 pF, Figures 6, 7
1.6
1.2VSS
Figure 5
Driver High-Impedance Output Current
Driver High-Impedance Output Current
Driver High-Impedance Output Differential Curent
(IA − IB)
3
V
V
−0.2VSS
-43
43
mA
0
32
μA
VA = 0V or 2.4V, VB = 1.2V
−20
20
μA
VA = −1.4V, VB = 1.2V
−32
0
μA
VA = 3.8V, VB = 1.2V
0
32
μA
VA = 0V or 2.4V, VB = 1.2V
−20
20
μA
VA = −1.4V, VB = 1.2V
−32
0
μA
VA = VB, −1.4V ≤ V ≤ 3.8V
−4
4
VA = 3.8V, VB = 1.2V
IA
480
μA
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DS91M047
Absolute Maximum Ratings (Note 4)
DS91M047
Symbol
IA(OFF)
Parameter
Conditions
Driver High-Impedance Output Power-Off Current
VA = 3.8V, VB = 1.2V
DE = 0V
Min
Typ
Max
Units
μA
0
32
−20
20
−32
0
0
32
−20
20
−32
0
−4
4
0V ≤ VDD ≤ 1.5V
VA = 0V or 2.4V, VB = 1.2V
DE = 0V
μA
0V ≤ VDD ≤ 1.5V
VA = −1.4V, VB = 1.2V
DE = 0V
μA
0V ≤ VDD ≤ 1.5V
IB(OFF)
Driver High-Impedance Output Power-Off Current
VA = 3.8V, VB = 1.2V
DE = 0V
μA
0V ≤ VDD ≤ 1.5V
VA = 0V or 2.4V, VB = 1.2V
DE = 0V
μA
0V ≤ VDD ≤ 1.5V
VA = −1.4V, VB = 1.2V
DE = 0V
μA
0V ≤ VDD ≤ 1.5V
IAB(OFF)
VA = VB, −1.4V ≤ V ≤ 3.8V
DE = 0V
Driver High-Impedance Output Power-Off Current
(IA(OFF) − IB(OFF))
μA
0V ≤ VDD ≤ 1.5V
CA
Driver Output Capacitance
7.8
pF
CB
Driver Output Capacitance
7.8
pF
CAB
Driver Output Differential Capacitance
3
pF
CA/B
Driver Output Capacitance Balance (CA/CB)
ICC
Power Supply Current
ICCZ
VDD = 0V
1
TRI-STATE Power Supply Current
RL = 50Ω (All Outputs)
DI = VDD or GND (All Inputs)
DE = VDD, DE = GND
f = 125 MHz
65
75
mA
RL = 50Ω (All Outputs)
DI = VDD or GND (All Inputs)
DE = GND, DE = VDD
19
24
mA
Note 4: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability
and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in
the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the
device should not be operated beyond such conditions.
Note 5: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified
or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 6: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD and
ΔVOD.
Note 7: Typical values represent most likely parametric norms for VDD = +3.3V and TA = +25°C, and at the Recommended Operation Conditions at the time of
product characterization and are not guaranteed.
Note 8: Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only.
Note 9: CL includes fixture capacitance and CD includes probe capacitance.
Note 10: Specification is guaranteed by characterization and is not tested in production.
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4
(Note 11, Note 12, Note 18)
Over supply voltage and operating temperature ranges, unless otherwise specified.
Min
Typ
Max
Units
tPHL
Symbol
Differential Propagation Delay High to Low
Parameter
Conditions
1.5
3.1
5.0
ns
tPLH
Differential Propagation Delay Low to High
1.5
3.1
5.0
ns
tSKD1
Differential Pulse Skew |tPHL − tPLH| (Note 13, Note 14)
0
70
140
ps
tSKD2
Channel-to-Channel Skew (Note 13, Note 15)
0
70
200
ps
tSKD3
Differential Part-to-Part Skew (Note 13, Note 16)
(Constant TA and VDD)
0
0.8
1.5
ns
tSKD4
Differential Part-to-Part Skew (Note 17)
3.5
ns
tTLH
Rise Time (Note 13)
1.1
2.0
3.0
ns
tTHL
Fall Time (Note 13)
1.1
2.0
3.0
ns
tPHZ
Disable Time High to Z
12.5
ns
tPLZ
Disable Time Low to Z
7
12.5
ns
tPZH
Enable Time Z to High
7
12.5
ns
tPZL
Enable Time Z to Low
RL = 50Ω
CL = 5 pF,
CD = 0.5 pF
Figures 8, 9
7
7
12.5
fMAX
Maximum Operating Frequency
(Note 13)
RL = 50Ω
CL = 5 pF,
CD = 0.5 pF
Figures 6, 7
0
125
ns
MHz
Note 11: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified
or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 12: Typical values represent most likely parametric norms for VDD = +3.3V and TA = +25°C, and at the Recommended Operation Conditions at the time of
product characterization and are not guaranteed.
Note 13: Specification is guaranteed by characterization and is not tested in production.
Note 14: tSKD1, |tPLHD − tPHLD|, Pulse Skew, is the magnitude difference in differential propagation delay time between the positive going edge and the negative
going edge of the same channel.
Note 15: tSKD2, Channel-to-Channel Skew, is the difference in propagation delay (tPLHD or tPHLD) among all output channels.
Note 16: tSKD3, Part-to-Part Skew, is defined as the difference between the minimum and maximum differential propagation delays. This specification applies to
devices at the same VDD and within 5°C of each other within the operating temperature range.
Note 17: tSKD4, Part-to-Part Skew, is the differential channel-to-channel skew of any event between devices. This specification applies to devices over
recommended operating temperature and voltage ranges, and across process distribution. tSKD4 is defined as |Max − Min| differential propagation delay.
Note 18: CL includes fixture capacitance and CD includes probe capacitance.
5
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DS91M047
Switching Characteristics
DS91M047
Parameter Measurement Information
20024033
FIGURE 1. Differential Driver Test Circuit
20024044
FIGURE 2. Differential Driver Waveforms
20024035
FIGURE 3. Differential Driver Full Load Test Circuit
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6
DS91M047
20024036
FIGURE 4. Differential Driver DC Open Test Circuit
20024037
FIGURE 5. Differential Driver Short-Circuit Test Circuit
20024004
FIGURE 6. Driver Propagation Delay and Transition Time Test Circuit
7
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DS91M047
20024038
FIGURE 7. Driver Propagation Delay and Transition Time Waveforms
20024006
FIGURE 8. Driver TRI-STATE Delay Test Circuit
20024007
FIGURE 9. Driver TRI-STATE Delay Waveforms
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8
DS91M047
Typical Performance Characteristics
20024050
20024052
Driver Rise Time as a Function of Temperature
Driver Propagation Delay (tPLHD) as a Function of
Temperature
20024051
Driver Fall Time as a Function of Temperature
20024053
Driver Propagation Delay (tPHLD) as a Function of
Temperature
20024058
Driver Output Signal Amplitude as a Function of
Resistive Load
20024054
Driver Power Supply Current as a Function of Frequency
9
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DS91M047
Physical Dimensions inches (millimeters) unless otherwise noted
16-Lead (0.150″ Wide) Molded Small Outline Package, JEDEC
Order Number DS91M047TMA
NS Package Number M16A
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10
DS91M047
Notes
11
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DS91M047 125 MHz Quad M-LVDS Line Driver
Notes
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