EMH2314 Ordering number : EN8759 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH2314 General-Purpose Switching Device Applications Features • • • • ON-resistance RDS(on)1=28mΩ(typ.) 1.8V drive Halogen free compliance Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Unit --12 V ±10 V --5 A --20 A 1.0 W Total Dissipation PD PT 1.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7045-002 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 EMH2314-TL-H 5 Taping Type : TL 1 Marking MP 2.1 1.7 8 LOT No. TL 0.2 4 0.5 0.05 0.75 2.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Electrical Connection 8 7 6 5 1 2 3 4 SANYO : EMH8 http://semicon.sanyo.com/en/network 51612PE TKIM TC-00002667 No. 8759-1/7 EMH2314 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | RDS(on)1 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Conditions ID= --1mA, VGS=0V VDS= --12V, VGS=0V Ratings min typ Unit max --12 VGS=±8V, VDS=0V VDS= --6V, ID= --1mA V --0.4 VDS= --6V, ID= --2.5A ID= --2.5A, VGS= --4.5V --10 μA ±10 μA --1.3 11 ID= --1.5A, VGS= --2.5V ID= --0.5A, VGS= --1.8V VDS= --6V, f=1MHz V S 28 37 mΩ 53 75 mΩ 133 200 mΩ 1300 pF 158 pF Reverse Transfer Capacitance Crss 143 pF Turn-ON Delay Time td(on) 16 ns Rise Time tr 77 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS= --6V, VGS= --4.5V, ID= --5A 79 ns 58 ns 12 nC 3 nC 2 IS= --5A, VGS=0V --0.9 nC --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --2.5A RL=2.4Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω EMH2314 S Ordering Information Device EMH2314-TL-H Package Shipping memo EMH8 3,000pcs./reel Pb Free and Halogen Free No. 8759-2/7 EMH2314 ID -- VDS 8V --6 . --1 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --1.6V --0.5 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V --4 --3 --2 0 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V IT16893 RDS(on) -- VGS 200 --5 --1 VGS= --1.3V 0 Ta=--2 5°C 75°C 25°C VDS= --6V Drain Current, ID -- A Drain Current, ID -- A --4.0 ID -- VGS --7 --2. 5V --4.5 --3.0 V --4.5V --8.0V --5.0 RDS(on) -- Ta 200 --3.0 IT16894 160 ID= --0.5A --1.5A --2.5A 100 80 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 3 2 3 2 = Ta 5 --2 1.0 7 5 25 °C 75 °C °C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 V GS= -- 40 I = --2.5A VGS= --4.5V, D 20 --20 0 20 40 60 80 100 120 140 160 IT16896 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 SW Time -- ID 1000 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS --1.4 IT16898 f=1MHz 5 Ciss, Coss, Crss -- pF 2 td(off) 100 7 tf 5 tr 3 5 7 --1.0 3 2 Ciss 1000 7 5 3 2 td(on) 2 3 --0.2 7 3 2 0 10000 VDD= --6V VGS= --4.5V 10 --0.1 --0.01 5 7 --10 IT16897 Drain Current, ID -- A Switching Time, SW Time -- ns = --1.5A 2.5V, I D 60 3 2 0.1 --0.01 5 80 --10 7 5 3 2 7 100 Ambient Temperature, Ta -- °C VDS= --6V 10 7 5 120 IT16895 | yfs | -- ID 100 7 5 140 0 --60 --40 --8 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V A --0.5 , I D= --1.8V = V GS 25°C 120 160 Ta=75 °C 140 180 --25°C 180 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 2 Drain Current, ID -- A 3 5 7 100 --10 IT16899 Coss Crss 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 Drain-to-Source Voltage, VDS -- V IT16900 No. 8759-3/7 EMH2314 VGS -- Qg --100 7 5 3 2 VDS= --6V ID= --5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 12 IT16901 PD -- Ta 1.4 11 --10 7 5 3 2 ASO IDP= --20A(PW≤10μs) ID= --5A DC 10 op 10 0m era ms s n( Ta = tio --1.0 7 5 3 2 --0.1 7 5 3 2 1 1m00μs s Operation in this area is limited by RDS(on). 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 Drain-to-Source Voltage, VDS -- V 2 3 5 7--10 IT16902 When mounted on ceramic substrate (900mm2×0.8mm) 1.2 1.0 To t al 0.8 di ss 1u 0.6 ni t ip at io n 0.4 0.2 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT16903 No. 8759-4/7 EMH2314 Embossed Taping Specification EMH2314-TL-H No. 8759-5/7 EMH2314 Outline Drawing EMH2314-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. 8759-6/7 EMH2314 Note on usage : Since the EMH2314 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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