SQ1470EH Automotive N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC VDS (V) 30 RDS(on) () at VGS = 4.5 V 0.065 RDS(on) () at VGS = 2.5 V 0.095 ID (A) 2.8 Configuration Single SOT-363 SC-70 (6-LEADS) D D 1 6 D D 2 5 D 9C 3 G S 4 XX YY Marking Code G Lot Traceability and Date Code S Part # Code N-Channel MOSFET Top View ORDERING INFORMATION Package SC-70 Lead (Pb)-free and Halogen-free SQ1470EH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 TC = 25 °C Continuous Drain Currenta Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 2.8 IS 2.8 11 IAS 10 PD V 2.8 IDM EAS UNIT 5 3.3 1.1 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 125 RthJF 45 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mountc °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. 1 / 11 www.freescale.net.cn SQ1470EH Automotive N-Channel 30 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 0.6 1.0 1.6 VDS = 0 V, VGS = ± 12 V IGSS - - ± 500 VGS = 0 V VDS = 30 V - - 1 - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 30 V, TJ = 125 °C VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150 On-State Drain Currenta ID(on) VGS = 4.5 V VDS5 V 5 - - Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VGS = 4.5 V ID = 3.8 A - 0.050 0.065 VGS = 4.5 V ID = 3.8 A, TJ = 125 °C - - 0.097 VGS = 4.5 V ID = 3.8 A, TJ = 175 °C - - 0.115 VGS = 2.5 V ID = 3.1 A VDS = 15 V, ID = 2 A - 0.070 0.095 - 8 - - 488 610 - 60 75 V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 36 45 Total Gate Chargec Qg - 4.4 6.6 - 1 - - 1 - 3 6.35 9.7 - 8 12 - 13 20 - 14 21 - 8 12 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec VGS = 4.5 V VDS = 25 V, f = 1 MHz VDS = 15 V, ID = 3.8 A f = 1 MHz td(on) tr Timec VGS = 0 V td(off) VDD = 15 V, RL = 3.9 ID 3.8 A, VGEN = 4.5 V, Rg = 1 tf pF nC ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 2.5 A, VGS = 0 V - - 11 A - 0.8 1.2 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 / 11 www.freescale.net.cn SQ1470EH Automotive N-Channel 30 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 10 VGS = 10 V thru 3 V VGS = 2.5 V 8 ID - Drain Current (A) ID - Drain Current (A) 8 6 4 2 6 4 TC = 25 °C 2 TC = 125 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 12 0.12 TC = - 55 °C 9 TC = 25 °C 6 TC = 125 °C RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 5 0.15 15 VGS = 2.5 V 0.09 0.06 VGS = 4.5 V 0.03 3 0.00 0 0.0 0.6 1.2 1.8 2.4 3.0 ID - Drain Current (A) 0 6 9 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 1000 3 12 15 VGS - Gate-to-Source Voltage (V) 5 800 C - Capacitance (pF) TC = - 55 °C 0 5 600 Ciss 400 200 ID = 3.8 A VDS = 15 V 4 3 2 1 Coss Crss 0 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance 3 / 11 25 30 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge www.freescale.net.cn 10 SQ1470EH Automotive N-Channel 30 V (D-S) 175 °C MOSFET 0.5 100 0.2 10 - 0.1 ID = 5 mA - 0.4 TJ = 150 °C IS - Source Current (A) VGS(th) Variance (V) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) ID = 250 μA 1 0.1 - 0.7 TJ = 25 °C 0.01 - 1.0 - 50 - 25 0 25 50 75 100 125 150 175 0.001 0.0 0.2 TJ - Temperature (°C) Threshold Voltage 0.8 1.0 1.2 2.0 ID = 3.8 A RDS(on) - On-Resistance (Normalized) RDS(on) - On-Resistance (Ω) 0.6 Source Drain Diode Forward Voltage 0.24 0.18 0.12 TJ = 150 °C 0.06 TJ = 25 °C 1.7 VGS = 4.5 V 1.4 VGS = 2.5 V 1.1 0.8 0.5 - 50 - 25 0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature 40 38 0 TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage 100 IDM Limited ID = 1 mA 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 0.4 VSD - Source-to-Drain Voltage (V) 36 34 100 μs Limited by RDS(on)* ID Limited 0.1 32 30 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 4 / 11 1 ms 1 0.01 0.01 TC = 25 °C Single Pulse 10 ms 100 ms 1s, 10 s, DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.freescale.net.cn SQ1470EH Automotive N-Channel 30 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 5 / 11 www.freescale.net.cn SQ1470EH Automotive N-Channel 30 V (D-S) 175 °C MOSFET SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -Bb e e1 D -Ac A2 A L A1 6 / 11 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.freescale.net.cn SQ1470EH Automotive N-Channel 30 V (D-S) 175 °C MOSFET Single-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance INTRODUCTION EVALUATION BOARDS SINGLE SC70-6 The new single 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes. These devices are intended for small to medium load applications where a miniaturized package is required. Devices in this package come in a range of on-resistance values, in n-channel and p-channel versions. This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for the single-channel version. The evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as in Figure 2. The board allows examination from the outer pins to 6-pin DIP connections, permitting test sockets to be used in evaluation testing. See Figure 3. 52 (mil) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, ( www.freescale.net.cn ) for the basic pad layout and dimensions. These pad patterns are sufficient for the low to medium power applications for which this package is intended. Increasing the drain pad pattern yields a reduction in thermal resistance and is a preferred footprint. The availability of four drain leads rather than the traditional single drain lead allows a better thermal path from the package to the PCB and external environment. 96 (mil) 6 5 4 1 2 3 71 (mil) 26 (mil) 13 (mil) 0, 0 (mil) 18 (mil) 26 (mil) PIN-OUT 16 (mil) Figure 1 shows the pin-out description and Pin 1 identification.The pin-out of this device allows the use of four pins as drain leads, which helps to reduce on-resistance and junction-to-ambient thermal resistance. SOT-363 SC-70 (6-LEADS) D 1 6 D D 2 5 D G 3 4 S FIGURE 2. SC-70 (6 leads) Single The thermal performance of the single 6-pin SC-70 has been measured on the EVB, comparing both the copper and Alloy 42 leadframes. This test was first conducted on the traditional Alloy 42 leadframe and was then repeated using the 1-inch2 PCB with dual-side copper coating. Top View FIGURE 1. 7 / 11 www.freescale.net.cn SQ1470EH Automotive N-Channel 30 V (D-S) 175 °C MOSFET Front of Board SC70-6 Back of Board SC70-6 vishay.com FIGURE 3. THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (Package Performance) COOPER LEADFRAME Room Ambient 25 _C The junction to foot thermal resistance is a useful method of comparing different packages thermal performance. A helpful way of presenting the thermal performance of the 6-Pin SC-70 copper leadframe device is to compare it to the traditional Alloy 42 version. Thermal performance for the 6-pin SC-70 measured as junction-to-foot thermal resistance, where the “foot” is the drain lead of the device at the bottom where it meets the PCB. The junction-to-foot thermal resistance is typically 40_C/W in the copper leadframe and 163_C/W in the Alloy 42 leadframe — a four-fold improvement. This improved performance is obtained by the enhanced thermal conductivity of copper over Alloy 42. The typical RqJA for the single 6-pin SC-70 with copper leadframe is 103_C/W steady-state, compared with 212_C/W for the Alloy 42 version. The figures are based on the 1-inch2 FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the two different leadframes at varying ambient temperatures. ALLOY 42 LEADFRAME PD + T J(max) * T A Rq JA Elevated Ambient 60 _C PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 212 CńW o o P D + 150 Co* 25 C 212 CńW P D + 590 mW P D + 425 mW 8 / 11 T J(max) * T A Rq JA PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 124 CńW o o P D + 150 Co* 60 C 124 CńW P D + 1.01 W P D + 726 mW As can be seen from the calculations above, the compact 6-pin SC-70 copper leadframe LITTLE FOOT power MOSFET can handle up to 1 W under the stated conditions. Testing To further aid comparison of copper and Alloy 42 leadframes, Figure 5 illustrates single-channel 6-pin SC-70 thermal performance on two different board sizes and two different pad patterns. The measured steady-state values of RqJA for the two leadframes are as follows: LITTLE FOOT 6-PIN SC-70 Power Dissipation Room Ambient 25 _C PD + Elevated Ambient 60 _C 1) Minimum recommended pad pattern on the EVB board V (see Figure 3. 1-inch2 2) Industry standard PCB with maximum copper both sides. Alloy 42 Copper 329.7_C/W 208.5_C/W 211.8_C/W 103.5_C/W The results indicate that designers can reduce thermal resistance (RqJA) by 36% simply by using the copper leadframe device rather than the Alloy 42 version. In this example, a 121_C/W reduction was achieved without an increase in board area. If increasing in board size is feasible, a further 105_C/W reduction could be obtained by utilizing a 1-inch2 square PCB area. The copper leadframe versions have the following suffix: Single: Si14xxEDH Dual: Si19xxEDH Complementary: Si15xxEDH www.freescale.net.cn SQ1470EH 400 250 320 200 240 Thermal Resistance (C/W) Thermal Resistance (C/W) Automotive N-Channel 30 V (D-S) 175 °C MOSFET Alloy 42 160 Copper 80 150 Alloy 42 100 50 Copper 0 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 10-5 9 / 11 Leadframe Comparison on EVB 10-3 10-2 10-1 1 10 100 1000 Time (Secs) Time (Secs) FIGURE 4. 10-4 FIGURE 5. Leadframe Comparison on Alloy 42 1-inch2 PCB www.freescale.net.cn SQ1470EH Automotive N-Channel 30 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index 10 / 11 www.freescale.net.cn SQ1470EH Automotive N-Channel 30 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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