STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. FEATURE PIN CONFIGURATION SOP-8 l l l l l 60V/8.2A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V 60V/7.6A, RDS(ON) = 30mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. STN4438 2009. V1 PDF created with pdfFactory Pro trial version www.pdffactory.com STN4438 N Channel Enhancement Mode MOSFET 8.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V ID 8.2 6.6 A IDM 40 A IS 3.0 A PD 3.1 2.0 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 ℃/W Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. STN4438 2009. V1 PDF created with pdfFactory Pro trial version www.pdffactory.com STN4438 N Channel Enhancement Mode MOSFET 8.2A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 60 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V 3.0 V VDS=0V,VGS=±20V ±100 nA VDS=48V,VGS=0V 1 5 Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V TJ=5℃ On-State Drain Current ID(on) VDS≧5V,VGS=10V Drain-source OnResistance RDS(on) VGS=10V,ID=10A VGS=4.5V,ID=8A Forward Transconductance gfs VDS=5V,ID=6.2AV 24 Diode Forward Voltage VSD IS=1A,VGS=0V 0.8 1.2 48 58 24.2 30 40 uA A 25 30 30 35 mΩ S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,VGS=10V ID≡8.2A nC 14.5 Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss 116 Turn-On Time td(on) tr 8.5 Turn-Off Time td(off) tf 1920 VDS ==30V,VGS=0V F=1MHz VDS=30V,RL=3.6Ω VGEN=3V 155 6 29 pF nS 6 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. STN4438 2009. V1 PDF created with pdfFactory Pro trial version www.pdffactory.com STN4438 N Channel Enhancement Mode MOSFET 8.2A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. STN4438 2009. V1 PDF created with pdfFactory Pro trial version www.pdffactory.com STN4438 N Channel Enhancement Mode MOSFET 8.2A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. STN4438 2009. V1 PDF created with pdfFactory Pro trial version www.pdffactory.com STN4438 N Channel Enhancement Mode MOSFET 8.2A PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. STN4438 2009. V1 PDF created with pdfFactory Pro trial version www.pdffactory.com