Product specification IRLML2030TRPbF HEXFET® Power MOSFET VDS VGS Max 30 ± 20 V V RDS(on) max 100 m : 154 m : (@VGS = 10V) RDS(on) max (@VGS = 4.5V) G 1 3 D S Micro3TM (SOT-23) IRLML2030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1 Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability results in ⇒ Absolute Maximum Ratings Symbol Max. Units Drain-Source Voltage 30 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.7 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.2 11 VDS Parameter IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.8 A W Linear Derating Factor 0.01 W/°C VGS Gate-to-Source Voltage ± 20 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter e RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t<10s) http://www.twtysemi.com f [email protected] Typ. Max. ––– 100 ––– 99 Units °C/W 1 of 2 Product specification IRLML2030TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Min. Typ. Max. Units Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current 30 ––– ––– ––– 0.03 ––– ––– 123 154 ––– 80 100 1.3 1.7 2.3 ––– ––– 1 V Conditions VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA mΩ V μA VGS = 10V, ID VDS = VGS, ID = 25μA VDS =24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 7.6 ––– Ω gfs Forward Transconductance 2.6 ––– ––– S Qg Total Gate Charge ––– 1.0 ––– Qgs Gate-to-Source Charge ––– 0.34 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 0.34 ––– VGS = 4.5V td(on) Turn-On Delay Time ––– 4.1 ––– VDD =15V tr Rise Time ––– 3.3 ––– td(off) Turn-Off Delay Time ––– 4.5 ––– tf Fall Time ––– 2.9 ––– VGS = 4.5V Ciss Input Capacitance ––– 110 ––– VGS = 0V Coss Output Capacitance ––– 29 ––– Crss Reverse Transfer Capacitance ––– 12 ––– IGSS nA d = 2.7A d VGS = 4.5V, ID = 2.2A VGS = 20V VGS = -20V VDS = 10V, ID = 2.7A ID = 2.7A nC ns pF VDS =15V d d ID = 1.0A RG = 6.8Ω VDS = 15V ƒ = 1.0MHz Source - Drain Ratings and Characteristics Symbol IS Parameter Continuous Source Current (Body Diode) ISM Pulsed Source Current c (Body Diode) Min. Typ. Max. Units ––– ––– 1.6 A ––– ––– 11 ––– ––– 1.0 Conditions MOSFET symbol showing the integral reverse p-n junction diode. Diode Forward Voltage trr Reverse Recovery Time ––– 9.0 14 ns TJ = 25°C, VR = 15V, IF=2.7A Qrr Reverse Recovery Charge ––– 0.3 0.4 nC di/dt = 100A/μs http://www.twtysemi.com [email protected] V TJ = 25°C, IS = 2.7A, VGS = 0V VSD d d 2 of 2