Product specification IRLML9303TRPbF VDS -30 V VGS Max ± 20 V RDS(on) max 165 m 270 m (@VGS = -10V) RDS(on) max (@VGS = -4.5V) HEXFET® Power MOSFET * ' 6 Micro3TM (SOT-23) IRLML9303TRPbF Application(s) System/Load Switch Features and Benefits Features Benefits Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification Multi-vendor compatibility results in Easier manufacturing Environmentally friendly Increased reliability Absolute Maximum Ratings Symbol VDS Parameter Max. Units -30 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V -2.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -1.8 IDM Pulsed Drain Current -12 PD @TA = 25°C Maximum Power Dissipation 1.25 PD @TA = 70°C Maximum Power Dissipation 0.80 Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 20 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C A W Thermal Resistance Symbol RJA RJA Parameter Junction-to-Ambient e Junction-to-Ambient (t<10s) http://www.twtysemi.com f [email protected] Typ. Max. ––– 100 ––– 99 Units °C/W 1 of 2 Product specification IRLML9303TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Min. Typ. Max. Units Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS IGSS -30 ––– ––– ––– -3.7 ––– ––– 135 165 ––– 220 270 -1.3 ––– -2.4 ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– -100 Drain-to-Source Leakage Current V Conditions VGS = 0V, ID = -250μA mV/°C Reference to 25°C, ID = -1mA m V μA nA d = -1.8A d VGS = -10V, ID = -2.3A VGS = -4.5V, ID VDS = VGS, ID = -10μA VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V Gate-to-Source Reverse Leakage ––– ––– 100 RG Internal Gate Resistance ––– 21 ––– gfs Qg Forward Transconductance 2.3 ––– ––– S Total Gate Charge ––– 2.0 ––– Qgs Gate-to-Source Charge ––– 0.57 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 1.2 ––– VGS = -4.5V td(on) Turn-On Delay Time ––– 7.5 ––– VDD tr Rise Time ––– 14 ––– td(off) Turn-Off Delay Time ––– 9.0 ––– tf Fall Time ––– 8.6 ––– Ciss Input Capacitance ––– 160 ––– Coss Output Capacitance ––– 39 ––– Crss Reverse Transfer Capacitance ––– 25 ––– VDS = -10V, ID =-2.3A ID = -2.3A nC ns VDS =-15V d d =-15V ID = -1.0A RG = 6.8 VGS = -4.5V VGS = 0V pF VDS = -25V ƒ = 1.0KHz Source - Drain Ratings and Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. Typ. Max. Units ––– ––– -1.3 ––– -12 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– -1.2 V trr Reverse Recovery Time ––– 12 18 ns Qrr Reverse Recovery Charge ––– 5.3 8.0 nC c http://www.twtysemi.com A [email protected] Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = -1.3A, VGS = 0V d TJ = 25°C, VR = -24V, IF=-1.3A di/dt = 100A/μs d 2 of 2