Transistors IC SMD Type Complementary MOSFET Half-Bridge (N- and P-Channel) KI4500BDY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA = 25 (TJ = 150 )* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 12 V 6.6 ?5.3 -3.8 A 7.3 5.3 -4.9 -3.1 A 2.1 1.1 -2.1 -1.1 A 2.5 1.3 2.5 1.3 W 1.6 0.8 1.6 0.8 W 30 PD V 9.1 IDM IS Unit Steady State -20 12 TA = 70 Continuous Source Current (Diode Conduction)* 10 sec 20 ID Pulsed Drain Current P-Channel Steady State -20 A -55 to 150 TJ, Tstg 10 sec Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Symbol t 10 sec RthJA Steady State Maximum Junction-to-Foot Steady State RthJc N-Channel P-Channel Typ Max Typ Max 40 50 41 50 75 95 75 95 20 22 23 26 Unit /W *Surface Mounted on FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI4500BDY Electrical Characteristics Ta = 25 Parameter VGS( th) Gate Threshold Voltage Gate Body Leakage IGSS Zero Gate Voltage Drain Current Drain Source On State Resistance* rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn On Time td(on) Rise Time tr Turn Off Delay Time 2 IDSS ID(on) On State Drain Currenta td( off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width www.kexin.com.cn Testconditons Symbol Min Typ Max VDS = VGS, ID = 250 A N-Ch 0.6 1.5 VDS = VGS, ID = -250 P-Ch -0.6 -1.5 A N-Ch 100 P-Ch 100 VDS = 20V, VGS = 0 V N-Ch 1 VDS = -16V, VGS = 0 V P-Ch -1 VDS = 0 V VGS = 12 V VDS = 20 V, VGS = 0 V, TJ = 55 N-Ch 5 VDS = -16V, VGS = 0 V, TJ = 55 P-Ch -5 VDS =5 V, VGS = 4.5 V N-Ch 30 VDS =-5 V, VGS = -4.5 V P-Ch -20 VGS = 4.5 V, ID = 9.1A N-Ch 0.016 0.020 VGS = -4.5 V, ID = -5.3A P-Ch 0.048 0.060 VGS = 2.5 V, ID = 3.3A N-Ch 0.024 0.030 0.082 0.100 VGS = -2.5 V, ID = -1A P-Ch N-Ch 29 VDS = -15 V, ID = -5.3A P-Ch 11 IS = 2.1A, VGS = 0 V N-Ch 0.8 1.2 IS = -2.1A, VGS = 0 V P-Ch ?0.8 -1.2 N-Channel N-Ch 11 17 VDS = 10 V, VGS = 4.5V, ID = 9.1A P-Ch 6.0 9 N-Ch 2.5 P-Channel P-Ch 1.3 VDS = -10 V, VGS = -4.5 V, ID = -5.3A N-Ch 3.2 P-Ch 1.6 N Channel N-Ch 35 50 VDD = 10 V, RL = 10 P-Ch 20 30 ID= 1A, VGEN = 10V, Rg = 6 N-Ch 50 80 P-Ch 35 60 P-Channel N-Ch 31 50 VDD = -10 V, RL = 10 P-Ch 55 85 ID= -1 A, VGEN = -4.5 V, Rg = 6 N-Ch 15 30 P-Ch 35 60 IF =- 2.1 A, di/dt = 100 A/ 300 s, duty cycle 2%. s s V nA A A VDS = 15 V, ID = 9.1A IF = 2.1A, di/dt = 100 A/ Unit mS V nC N-Ch 30 60 P-Ch 25 50 ns