KEXIN KI4500BDY

Transistors
IC
SMD Type
Complementary MOSFET Half-Bridge (N- and P-Channel)
KI4500BDY
Features
TrenchFET Power MOSFET
Absolute Maximum Ratings TA = 25
Parameter
N-Channel
Symbol
10 sec
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current TA = 25
(TJ = 150 )*
Maximum Power Dissipation*
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*Surface Mounted on FR4 Board;t
12
V
6.6
?5.3
-3.8
A
7.3
5.3
-4.9
-3.1
A
2.1
1.1
-2.1
-1.1
A
2.5
1.3
2.5
1.3
W
1.6
0.8
1.6
0.8
W
30
PD
V
9.1
IDM
IS
Unit
Steady State
-20
12
TA = 70
Continuous Source Current (Diode Conduction)*
10 sec
20
ID
Pulsed Drain Current
P-Channel
Steady State
-20
A
-55 to 150
TJ, Tstg
10 sec
Thermal Resistance Ratings TA = 25
Parameter
Maximum Junction-to-Ambient*
Symbol
t
10 sec
RthJA
Steady State
Maximum Junction-to-Foot
Steady State
RthJc
N-Channel
P-Channel
Typ
Max
Typ
Max
40
50
41
50
75
95
75
95
20
22
23
26
Unit
/W
*Surface Mounted on FR4 Board.
www.kexin.com.cn
1
Transistors
IC
SMD Type
KI4500BDY
Electrical Characteristics Ta = 25
Parameter
VGS( th)
Gate Threshold Voltage
Gate Body Leakage
IGSS
Zero Gate Voltage Drain Current
Drain Source On State Resistance*
rDS(on)
Forward Transconductance*
gfs
Diode Forward Voltage*
VSD
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Turn On Time
td(on)
Rise Time
tr
Turn Off Delay Time
2
IDSS
ID(on)
On State Drain Currenta
td( off)
Fall Time
tf
Source-Drain Reverse Recovery
Time
trr
* Pulse test; pulse width
www.kexin.com.cn
Testconditons
Symbol
Min
Typ
Max
VDS = VGS, ID = 250 A
N-Ch
0.6
1.5
VDS = VGS, ID = -250
P-Ch
-0.6
-1.5
A
N-Ch
100
P-Ch
100
VDS = 20V, VGS = 0 V
N-Ch
1
VDS = -16V, VGS = 0 V
P-Ch
-1
VDS = 0 V VGS = 12 V
VDS = 20 V, VGS = 0 V, TJ = 55
N-Ch
5
VDS = -16V, VGS = 0 V, TJ = 55
P-Ch
-5
VDS =5 V, VGS = 4.5 V
N-Ch
30
VDS =-5 V, VGS = -4.5 V
P-Ch
-20
VGS = 4.5 V, ID = 9.1A
N-Ch
0.016 0.020
VGS = -4.5 V, ID = -5.3A
P-Ch
0.048 0.060
VGS = 2.5 V, ID = 3.3A
N-Ch
0.024 0.030
0.082 0.100
VGS = -2.5 V, ID = -1A
P-Ch
N-Ch
29
VDS = -15 V, ID = -5.3A
P-Ch
11
IS = 2.1A, VGS = 0 V
N-Ch
0.8
1.2
IS = -2.1A, VGS = 0 V
P-Ch
?0.8
-1.2
N-Channel
N-Ch
11
17
VDS = 10 V, VGS = 4.5V, ID = 9.1A
P-Ch
6.0
9
N-Ch
2.5
P-Channel
P-Ch
1.3
VDS = -10 V, VGS = -4.5 V, ID = -5.3A
N-Ch
3.2
P-Ch
1.6
N Channel
N-Ch
35
50
VDD = 10 V, RL = 10
P-Ch
20
30
ID= 1A, VGEN = 10V, Rg = 6
N-Ch
50
80
P-Ch
35
60
P-Channel
N-Ch
31
50
VDD = -10 V, RL = 10
P-Ch
55
85
ID= -1 A, VGEN = -4.5 V, Rg = 6
N-Ch
15
30
P-Ch
35
60
IF =- 2.1 A, di/dt = 100 A/
300 s, duty cycle 2%.
s
s
V
nA
A
A
VDS = 15 V, ID = 9.1A
IF = 2.1A, di/dt = 100 A/
Unit
mS
V
nC
N-Ch
30
60
P-Ch
25
50
ns