Product specification NTR1P02L, NVTR01P02L Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package V(BR)DSS RDS(on) Max ID Max −20 V 220 mW @ −4.5 V −1.3 A P−Channel D These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are DC−DC converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. G Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • NVTR Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free and Halide−Free Packages are Available Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage − Continuous VGS ±12 V Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) ID IDM −1.3 −4.0 A A PD 400 mW TJ, Tstg − 55 to 150 °C RqJA 300 °C/W TL 260 °C Operating and Storage Temperature Range Thermal Resistance − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s) Drain 3 2 Symbol Total Power Dissipation @ TA = 25°C 3 MARKING DIAGRAM & PIN ASSIGNMENT 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating S SOT−23 CASE 318 STYLE 21 1 Gate 2 Source P02 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NTR1P02LT1G SOT−23 (Pb−Free) 3000 Tape & Reel NTR1P02LT3G SOT−23 (Pb−Free) 10,000 Tape & Reel NVTR01P02LT1G SOT−23 (Pb−Free) 3000 Tape & Reel Device Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. P02 M G G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.twtysemi.com [email protected] 1 of 2 Product specification NTR1P02L, NVTR01P02L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Test Condition Symbol Min Typ Max Unit Drain−to−Source Breakdown Voltage (VGS = 0 V, ID = −10 mA) V(BR)DSS −20 Zero Gate Voltage Drain Current (VDS = −16 V, VGS = 0 V) (VDS = −16 V, VGS = 0 V, TJ = 125°C) IDSS −1.0 −10 mA Gate−Body Leakage Current (VGS = ± 12 V, VDS = 0 V) IGSS ±100 nA Gate Threshold Voltage (VDS = VGS, ID = −250 mA) VGS(th) −1.0 −1.25 V Static Drain−to−Source On−Resistance (VGS = −4.5 V, ID = −0.75 A) (VGS = −2.5 V, ID = −0.5 A) rDS(on) 0.140 0.200 0.22 0.35 W Input Capacitance (VDS = −5.0 V) Ciss 225 Output Capacitance (VDS = −5.0 V) Coss 130 Transfer Capacitance (VDS = −5.0 V) Crss 55 td(on) 7.0 tr 15 td(off) 18 tf 9 QT 3.1 OFF CHARACTERISTICS V TY CHARACTERISTICS (Note 1) −0.7 DYNAMIC CHARACTERISTICS pF SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VGS = −4.5 V, VDD = −5.0 V, ID = −1.0 A, RL = 5.0 W, RG = 6.0 W) Fall Time Total Gate Charge (VDS = −16 V, ID = −1.5 A, VGS = −4.5 V) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) (VGS = 0 V, IS = −0.6 A) Reverse Recovery Time (IS = −1.0 A, VGS = 0 V, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge IS −0.6 ISM −0.75 VSD −1.0 trr 16 ta 11 tb 5.5 QRR 8.5 A V ns nC 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://www.twtysemi.com [email protected] 2 of 2