UNITPOWER UM4953

UM4953
Dual P-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UM4953 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UM4953 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
-30V
80mΩ
ID
-4.9A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
Dual SOP8 Pin Configuration
z Super Low Gate Charge
5
z 100% EAS Guaranteed
/
z Green Device Available
&
,
%
,
5
!
$
,
/
"
#
,
Parameter
,
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±25
ID*
Maximum Drain Current – Continuous
IDM
Maximum Drain Current – Pulsed
PD
Maximum Power Dissipation
TJ
TA = 25°C
TSTG
-4.9
-30
TA = 25°C
2.5
TA = 100°C
1.0
Maximum Junction Temperature
150
Storage Temperature Range
/
/
SO − 8
Absolute Maximum Ratings
Symbol
5
5
z Excellent CdV/dt effect decline
-55 to 150
,
,
Unit
V
A
W
°C
Thermal Data
*
RθJA
Thermal Resistance - Junction to Ambient
50
1
°C/W
,
UM4953
Dual P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Test Condition
UM4953
Min.
=
Typ .
Max.
Unit
Static
BV DSS
IDSS
VGS(th)
IGSS
R DS(ON)
VDS=VGS , IDS=-250µA
Gate Leakage Current
VGS=±25V , VDS=0V
Drain-Source On-state
VGS=-10V , IDS=-4.9A
>
53
60
VGS=-4.5V , IDS=-3.6A
80
95
ISD=-1.7A , VGS=0V
-0.7
-1.3
29
Resistance
V SD
Dynamic
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Diode Forward Voltage
>
VGS=0V , IDS=-250µA
V
-30
VDS=-24V , VGS=0V
=
-1
-1.5
-1
µA
-2
V
±100
nA
Qg
Total Gate Charge
VDS=-15V , IGS=-10V
22.3
Q gs
Gate-Source Charge
lD=-4.6A
4.65
Q gd
Gate-Drain Charge
2
td(ON)
Tr
Turn-on Delay Time
Turn-on Rise Time
10
18
15
20
td(OFF)
Turn-off Delay Time
22
38
15
1260
25
Tf
Turn-off Fall Time
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Notes
a
b
VDD=-15V , ID=-2A ,
VGEN=-10V , R G=6Ω
R L=7.5Ω
VGS=0V
VDS=-25V
Reverse Transfer Capacitance Frequency=1.0MHz
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
2
340
220
mΩ
V
nC
ns
pF
UM4953
Dual P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
30
-V/5= 5,6,7,8,9,10V
15
10
-V/5=3V
5
20
15
TJ=125°C
1
2
3
4
5
6
7
TJ=-55°C
10
TJ=25°C
5
-V/5=2V
0
0
8
0
1
Threshold Voltage vs. Junction Temperature
0.75
0.50
0.25
25
50
75
RDS(on)-On-Resistance
(Ω)
1.00
-VGS(th)-Threshold Voltage (V)
(Normalized)
1.25
0
0.10
V/5=-4.5V
0.08
V/5=-10V
0.06
0.04
0.02
0.00
100 125 150
0
3
2.00
-I,= 4.9A
RDS(on)-On-Resistance (Ω)
(Normalized)
1.75
12
15
-VGS=10V
-ID=4.9A
1.50
0.175
1.25
0.125
1.00
0.150
RDS(on)-On-Resistance
(Ω)
9
On-Resistance vs. Junction Temperature
0.200
0.75
0.100
0.50
0.075
0.050
0.025
6
-ID - Drain Current (A)
On-Resistance vs. Gate-to-Source Voltage
0.225
5
0.12
Tj - Junction Temperature (°C)
0.250
4
0.14
-IDS=250µA
-25
3
On-Resistance vs. Drain Current
0.00
-50
2
-VGS - Gate-to-Source Voltage (V)
-VDS - Drain-to-Source Voltage (V)
1.50
-V/5=4V
-ID-Drain Current (A)
20
25
-ID-Drain Current (A)
25
0
30
0.25
1
2
3
4
5
6
7
8
9
0.00
-50
10
-25
0
25
50
75
100 125 150
TJ - Junction Temperature
(°C)
-VGS - Gate-to-Source Voltage (V)
3
UM4953
Dual P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
Gate Charge
-VD=10V
-ID=4.9A
Frequency=1MHz
2400
6
4
2000
1600
Ciss
8
1200
2
800
Coss
400
0
5
0
2800
Capacitance (pF)
-VGS-Gate-Source Voltage (V)
10
Capacitance
10
15
20
0
25
Crss
0
5
10
15
20
25
QG - Gate Charge (nC)
-VDS - Drain-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
Single Pulse Power
30
30
50
TJ=25°C
30
TJ=150°C
1
Power (W)
40
-IS-Source Current (Α)
10
20
10
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
0.01
0.1
1
10
100
Time (sec)
-VSD-Source-to-Drain Voltage (V )
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
0.1
D= 0.05
D= 0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.T JM -T A=P DMZ thJA
4.Surface Mounted
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
Square Wave Pulse Duration (sec)
4
10
Normalized Effective Transient
Thermal Impedance
2
100