UM4953 Dual P-Ch 30V Fast Switching MOSFETs General Description Product Summery The UM4953 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM4953 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) -30V 80mΩ ID -4.9A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology Dual SOP8 Pin Configuration z Super Low Gate Charge 5 z 100% EAS Guaranteed / z Green Device Available & , % , 5 ! $ , / " # , Parameter , Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 ID* Maximum Drain Current Continuous IDM Maximum Drain Current Pulsed PD Maximum Power Dissipation TJ TA = 25°C TSTG -4.9 -30 TA = 25°C 2.5 TA = 100°C 1.0 Maximum Junction Temperature 150 Storage Temperature Range / / SO − 8 Absolute Maximum Ratings Symbol 5 5 z Excellent CdV/dt effect decline -55 to 150 , , Unit V A W °C Thermal Data * RθJA Thermal Resistance - Junction to Ambient 50 1 °C/W , UM4953 Dual P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Condition UM4953 Min. = Typ . Max. Unit Static BV DSS IDSS VGS(th) IGSS R DS(ON) VDS=VGS , IDS=-250µA Gate Leakage Current VGS=±25V , VDS=0V Drain-Source On-state VGS=-10V , IDS=-4.9A > 53 60 VGS=-4.5V , IDS=-3.6A 80 95 ISD=-1.7A , VGS=0V -0.7 -1.3 29 Resistance V SD Dynamic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Diode Forward Voltage > VGS=0V , IDS=-250µA V -30 VDS=-24V , VGS=0V = -1 -1.5 -1 µA -2 V ±100 nA Qg Total Gate Charge VDS=-15V , IGS=-10V 22.3 Q gs Gate-Source Charge lD=-4.6A 4.65 Q gd Gate-Drain Charge 2 td(ON) Tr Turn-on Delay Time Turn-on Rise Time 10 18 15 20 td(OFF) Turn-off Delay Time 22 38 15 1260 25 Tf Turn-off Fall Time C iss Input Capacitance C oss Output Capacitance C rss Notes a b VDD=-15V , ID=-2A , VGEN=-10V , R G=6Ω R L=7.5Ω VGS=0V VDS=-25V Reverse Transfer Capacitance Frequency=1.0MHz : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing 2 340 220 mΩ V nC ns pF UM4953 Dual P-Ch 30V Fast Switching MOSFETs Typical Characteristics 30 -V/5= 5,6,7,8,9,10V 15 10 -V/5=3V 5 20 15 TJ=125°C 1 2 3 4 5 6 7 TJ=-55°C 10 TJ=25°C 5 -V/5=2V 0 0 8 0 1 Threshold Voltage vs. Junction Temperature 0.75 0.50 0.25 25 50 75 RDS(on)-On-Resistance (Ω) 1.00 -VGS(th)-Threshold Voltage (V) (Normalized) 1.25 0 0.10 V/5=-4.5V 0.08 V/5=-10V 0.06 0.04 0.02 0.00 100 125 150 0 3 2.00 -I,= 4.9A RDS(on)-On-Resistance (Ω) (Normalized) 1.75 12 15 -VGS=10V -ID=4.9A 1.50 0.175 1.25 0.125 1.00 0.150 RDS(on)-On-Resistance (Ω) 9 On-Resistance vs. Junction Temperature 0.200 0.75 0.100 0.50 0.075 0.050 0.025 6 -ID - Drain Current (A) On-Resistance vs. Gate-to-Source Voltage 0.225 5 0.12 Tj - Junction Temperature (°C) 0.250 4 0.14 -IDS=250µA -25 3 On-Resistance vs. Drain Current 0.00 -50 2 -VGS - Gate-to-Source Voltage (V) -VDS - Drain-to-Source Voltage (V) 1.50 -V/5=4V -ID-Drain Current (A) 20 25 -ID-Drain Current (A) 25 0 30 0.25 1 2 3 4 5 6 7 8 9 0.00 -50 10 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) -VGS - Gate-to-Source Voltage (V) 3 UM4953 Dual P-Ch 30V Fast Switching MOSFETs Typical Characteristics Gate Charge -VD=10V -ID=4.9A Frequency=1MHz 2400 6 4 2000 1600 Ciss 8 1200 2 800 Coss 400 0 5 0 2800 Capacitance (pF) -VGS-Gate-Source Voltage (V) 10 Capacitance 10 15 20 0 25 Crss 0 5 10 15 20 25 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Source-Drain Diode Forward Voltage Single Pulse Power 30 30 50 TJ=25°C 30 TJ=150°C 1 Power (W) 40 -IS-Source Current (Α) 10 20 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.01 0.1 1 10 100 Time (sec) -VSD-Source-to-Drain Voltage (V ) Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 D= 0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A=P DMZ thJA 4.Surface Mounted SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 Square Wave Pulse Duration (sec) 4 10 Normalized Effective Transient Thermal Impedance 2 100