RoHS 2SA950 2SA950 TRANSISTOR (PNP) FEATURE Power dissipation 1. EMITTER PCM : 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range Tj, Tstg: D T ,. L TO-92 3. BASE IC -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Symbol Collector-base breakdown voltage V(BR)CBO C E L O 1 2 3 unless otherwise specified) R T Parameter N C O Test conditions MIN TYP MAX UNIT Ic= -1mA , IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -1Ma, IC=0 -5 V ICBO VCB= -35V, IE=0 -0.1 µA IEBO VEB= -5V, IC=0 -0.1 µA hFE(1) VCE=-1V, IC=-100mA 100 hFE(2) VCE=-1V, IC= -700mA 35 VCE(sat) IC= -500mA, IB= -20mA Collector cut-off current Emitter cut-off current DC current gain J E E Collector-emitter saturation voltage Collector Output Capacitance W Cob Transition frequency fT VCB=-10V, IE=0 f=1MHZ VCE=-5V, IC=-10mA, 320 -0.7 V 19 pF 120 MHz CLASSIFICATION OF hFE(1) Rank O Y Range 100-200 160-320 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]