XINDEYI UD0006

UD0006
N-Ch 100V Fast Switching MOSFETs
General Description
Product Summery
The UD0006 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD0006 meet the RoHS and Green Product
requirement with full function reliability approved.
BVDSS
RDS(ON)
ID
145m
15A
100V
Applications
High Frequency Point-of-Load Synchronous
Buck Converter
Networking DC-DC Power System
Features
Power Tool Application
TO252 Pin Configuration
Advanced high cell density Trench technology
Super Low Gate Charge
D
Excellent Cdv/dt effect decline
Green Device Available
Absolute Maximum Ratings
G
D
S
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Sou ce Voltage
20
V
1
14.7
A
1
13.6
A
ID@TC=25
ID@TC=70
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
59
A
3
50
W
3
Total Power Dissipation
32
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
PD@TC=25
PD@TC=70
Pulsed Drain Current
2
Total Power Dissipation
Thermal Data
Symbol
R
R
Max.
Unit
JA
Thermal Resistance Junction-ambient 1
Parameter
Typ.
---
3.6
/W
JC
Thermal Resistance Junction-Case1
---
50
/W
1
UD0006
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25
Symbol
, unless otherwise noted)
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
Conditions
Min.
Typ.
Max.
Unit
100
---
---
V
VGS=10V , ID=6A
---
100
145
VGS=4.5V , ID=5A
---
150
195
1.0
1.6
3.0
V
---
-4.12
---
mV/
---
---
1
---
---
---
---
---
VGS=0V , ID=250uA
VGS=VDS , ID =250uA
m
VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS
gfs
Forward Transconductance
VDS=10V ,DI=6A
---
5
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.5
5
Qg
Total Gate Charge (10V)
---
7.8
---
Qgs
Gate-Source Charge
---
1.3
---
Qgd
Gate-Drain Charge
---
2.9
---
Td(on)
Turn-On Delay Time
---
9.8
---
---
10.2
---
---
18
---
Turn-Off Delay Time
---
8.5
---
Ciss
Input Capacitance
---
480
---
Coss
Output Capacitance
---
47
pF
Crss
Reverse Transfer Capacitance
29
-----
Min.
Typ.
Max.
Unit
---
0.775
VDS=80V , VGS=0V , TJ=25
20V , VDS=0V
VDS=50V , VGS=10V , ID=6A
Tr
Fall Time
VDD=50V , VGS=10V , RG=6
Td(off)
Rise Time
ID=1A
Tf
VDS=25V , VGS=0V , f=1MHz
---
100
---
uA
nA
S
nC
ns
Diode Characteristics
Symbol
VSD
Parameter
2
Diode Forward Voltage
Conditions
VGS=0V , IS=1A , TJ=25
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
300us , duty cycle
2%
3.The power dissipation is limited by 150
junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
1.3
V
UD0006
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
10
VGS=10V
12
ID, Drain Current(A)
VGS=8V
VGS=7V
9
VGS=6V
6
VGS=5V
3
0
0
2.0
1.5
1.0
0.5
2.5
6
Tj=125 C
4
-55 C
2
0
2.4
3.6
4.8
7.2
6.0
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.0
200
1.8
120
V G S =10V
80
40
3
1
6
9
12
1.4
1.2
1.0
0
15
V G S =10V
I D =6A
1.6
0
I D, Drain Current(A)
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25
50
50
75
100
125
150
T j ( °C )
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
0.2
1.2
VGS, Gate-to-Source Voltage(V)
240
1
25 C
V DS, Drain-to-Source Voltage(V)
160
DS(on)
8
0
3.0
R DS(on), On-Resistance
Normalized
I
ID, Drain Current(A)
15
75 100 125 150
Tj, Junction Temperature(° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
3
UD0006
N-Ch 100V Fast Switching MOSFETs
20.0
420
Is, Source-drain current(A)
I D =6A
350
125 C
210
75 C
140
25 C
70
0
2
4
6
8
V GS, Gate to Source Voltage(V)
0.75
1.00
1.25
Crss
5
10
15
20
25
10
VDS=50
ID=6A
8
6
4
2
0
30
0
1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
80
10
0.1
Rg, Gate Resistance(Ω)
DC
L im
s
ms
VGS=10V
Single Pulse
TA=25 C
0.1
10
10
1
VDS=50V,ID=1A
VGS=10V
1
1m
it
10
N)
I D, Drain Current(A)
Tr
Tf
s
)
n
(o
TD
10
0u
f)
(o
D
T
10
10
(O
C, Capacitance(pF)
Coss
30
Switching Time(ns)
0.50
Figure 8. Body Diode Forward Voltage
Variation with Source Current
300
1
0.25
Figure 7. On-Resistance vs.
Gate-Source Voltage
450
0
0
V SD, Body Diode Forward Voltage(V)
Ciss
0
25 C
75 C
V GS, Gate-to-Source Voltage(V)
750
150
125 C
1.0
10
900
600
5.0
S
0
10.0
RD
RDS(on)(m Ω)
280
1
10
100
V DS, Drain-Source Voltage(V)
4