UD0006 N-Ch 100V Fast Switching MOSFETs General Description Product Summery The UD0006 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD0006 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) ID 145m 15A 100V Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Features Power Tool Application TO252 Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge D Excellent Cdv/dt effect decline Green Device Available Absolute Maximum Ratings G D S Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Sou ce Voltage 20 V 1 14.7 A 1 13.6 A ID@TC=25 ID@TC=70 IDM Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 59 A 3 50 W 3 Total Power Dissipation 32 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 PD@TC=25 PD@TC=70 Pulsed Drain Current 2 Total Power Dissipation Thermal Data Symbol R R Max. Unit JA Thermal Resistance Junction-ambient 1 Parameter Typ. --- 3.6 /W JC Thermal Resistance Junction-Case1 --- 50 /W 1 UD0006 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 Symbol , unless otherwise noted) Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit 100 --- --- V VGS=10V , ID=6A --- 100 145 VGS=4.5V , ID=5A --- 150 195 1.0 1.6 3.0 V --- -4.12 --- mV/ --- --- 1 --- --- --- --- --- VGS=0V , ID=250uA VGS=VDS , ID =250uA m VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS gfs Forward Transconductance VDS=10V ,DI=6A --- 5 Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Qg Total Gate Charge (10V) --- 7.8 --- Qgs Gate-Source Charge --- 1.3 --- Qgd Gate-Drain Charge --- 2.9 --- Td(on) Turn-On Delay Time --- 9.8 --- --- 10.2 --- --- 18 --- Turn-Off Delay Time --- 8.5 --- Ciss Input Capacitance --- 480 --- Coss Output Capacitance --- 47 pF Crss Reverse Transfer Capacitance 29 ----- Min. Typ. Max. Unit --- 0.775 VDS=80V , VGS=0V , TJ=25 20V , VDS=0V VDS=50V , VGS=10V , ID=6A Tr Fall Time VDD=50V , VGS=10V , RG=6 Td(off) Rise Time ID=1A Tf VDS=25V , VGS=0V , f=1MHz --- 100 --- uA nA S nC ns Diode Characteristics Symbol VSD Parameter 2 Diode Forward Voltage Conditions VGS=0V , IS=1A , TJ=25 Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 300us , duty cycle 2% 3.The power dissipation is limited by 150 junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 1.3 V UD0006 N-Ch 100V Fast Switching MOSFETs Typical Characteristics 10 VGS=10V 12 ID, Drain Current(A) VGS=8V VGS=7V 9 VGS=6V 6 VGS=5V 3 0 0 2.0 1.5 1.0 0.5 2.5 6 Tj=125 C 4 -55 C 2 0 2.4 3.6 4.8 7.2 6.0 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2.0 200 1.8 120 V G S =10V 80 40 3 1 6 9 12 1.4 1.2 1.0 0 15 V G S =10V I D =6A 1.6 0 I D, Drain Current(A) V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 0.2 1.2 VGS, Gate-to-Source Voltage(V) 240 1 25 C V DS, Drain-to-Source Voltage(V) 160 DS(on) 8 0 3.0 R DS(on), On-Resistance Normalized I ID, Drain Current(A) 15 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature 3 UD0006 N-Ch 100V Fast Switching MOSFETs 20.0 420 Is, Source-drain current(A) I D =6A 350 125 C 210 75 C 140 25 C 70 0 2 4 6 8 V GS, Gate to Source Voltage(V) 0.75 1.00 1.25 Crss 5 10 15 20 25 10 VDS=50 ID=6A 8 6 4 2 0 30 0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 80 10 0.1 Rg, Gate Resistance(Ω) DC L im s ms VGS=10V Single Pulse TA=25 C 0.1 10 10 1 VDS=50V,ID=1A VGS=10V 1 1m it 10 N) I D, Drain Current(A) Tr Tf s ) n (o TD 10 0u f) (o D T 10 10 (O C, Capacitance(pF) Coss 30 Switching Time(ns) 0.50 Figure 8. Body Diode Forward Voltage Variation with Source Current 300 1 0.25 Figure 7. On-Resistance vs. Gate-Source Voltage 450 0 0 V SD, Body Diode Forward Voltage(V) Ciss 0 25 C 75 C V GS, Gate-to-Source Voltage(V) 750 150 125 C 1.0 10 900 600 5.0 S 0 10.0 RD RDS(on)(m Ω) 280 1 10 100 V DS, Drain-Source Voltage(V) 4