US2302 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The US2302 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The US2302 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) 20V ID 120m 3.0A Applications z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Features Advanced high cell density Trench technology SOT23 Pin Configuration Super Low Gate Charge Excellent Cdv/dt effect decline D Green Device Available G Absolute Maximum Ratings Symbol Parameter S Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 ID* Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* 3 VGS=4.5V 10 1 150 Unit V A A °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient 150 1 W °C/W US2302 N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 Symbol , unless otherwise noted) Parameter Test Conditions US2302 Unit Min. Typ. Max. 20 - - - - 1 - - 30 0.7 1 V µA STATIC CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) a a VSD TJ=85°C VDS=VGS, IDS=250µA 0.5 Gate Leakage Current VGS=±10V, VDS=0V - - ±10 VGS=4.5V, IDS=3A - 50 65 VGS=2.5V, IDS=2A - 65 90 VGS=1.8V, IDS=0.5A - 120 200 ISD=1A, VGS=0V - 0.7 1.3 - 4.4 6 - 0.5 - - 1.6 - Drain-Source On-state Resistance Diode Forward Voltage Gate-Source Charge Qgd Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=3A Parameter DYNAMIC CHARACTERISTICS Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-On Delay Time Turn-On Rise Time td(OFF) Turn-Off Delay Time µA mΩ V Test Conditions US2302 nC Unit Min. Typ. Max. - 5 - - 320 - - 70 - - 50 - - 4 8 - 14 26 - 21 39 - 5 10 - 15 - ns - 6 - nC b RG tr V b Total Gate Charge Qgs Symbol VDS=16V, VGS=0V Gate Threshold Voltage GATE CHARGE CHARACTERISTICS Qg VGS=0V, IDS=250µA tf Turn-Off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=10V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω ISD=3A, dlSD/dt=100A/µs Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. 2 Ω pF ns US2302 N-Ch 20V Fast Switching MOSFETs Typical Characteristics Power Dissipation Drain Current 3.5 1.0 3.0 ID - Drain Current (A) Ptot - Power (W) 0.8 0.6 0.4 2.5 2.0 1.5 1.0 0.2 0.5 o 0.0 o TA=25 C 0 20 40 60 0.0 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 30 Normalized Transient Thermal Resistance 2 Rd s(o n) Lim it 10 ID - Drain Current (A) TA=25 C,VG=4.5V 300µs 1 1ms 10ms 100ms 0.1 1s DC o T =25 C 0.01 A 0.01 0.1 1 10 Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 2 0.01 1E-4 100 VDS - Drain - Source Voltage (V) Mounted on 1in pad o RθJA : 150 C/W Single Pulse 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) 3 US2302 N-Ch 20V Fast Switching MOSFETs Typical Characteristics Output Characteristics Drain-Source On Resistance 10 200 VGS= 2.5,3,4,5,6,7,8,9,10V 9 VGS=1.8V RDS(ON) - On - Resistance (mΩ) 2V 8 7 6 5 4 3 1.5V 2 1 160 140 120 100 80 VGS=2.5V VGS=4.5V 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 2 4 6 8 10 ID - Drain Current (A) VDS - Drain-Source Voltage (V) Drain-Source On Resistance Gate Threshold Voltage 140 1.8 ID=3A IDS =250µA 1.6 Normalized Threshold Voltage 120 RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 180 100 80 60 40 1.4 1.2 1.0 0.8 0.6 0.4 0.2 20 0 1 2 3 4 5 6 7 8 9 0.0 -50 -25 10 VGS - Gate - Source Voltage (V) 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 4 US2302 N-Ch 20V Fast Switching MOSFETs Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward 10 1.8 VGS = 4.5V IDS = 3A o Tj=150 C 1.4 IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 0.6 o Tj=25 C 1 0.4 o RON@Tj=25 C: 50mΩ 0.2 -50 -25 0 25 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 500 Frequency=1MHz 450 9 400 8 VGS - Gate - source Voltage (V) C - Capacitance (pF) 50 350 Ciss 300 250 200 150 100 Coss 50 Crss 0 IDS = 3A 7 6 5 4 3 2 1 0 0 VDS= 10V 4 8 12 16 20 0 2 4 6 8 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) 5 10 US2302 N-Ch 20V Fast Switching MOSFETs Typical Characteristics SOT-23 D e E E1 SEE VIEW A c b 0.25 A L GAUGE PLANE SEATING PLANE 0 A1 A2 e1 VIEW A S Y M B O L SOT-23 MILLIMETERS MIN. INCHES A MAX. MIN. MAX. 0.057 1.45 0.006 A1 0.00 0.15 0.000 A2 0.90 1.30 0.035 0.051 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 D 2.70 3.10 0.106 0.122 E 2.60 3.00 0.102 0.118 E1 1.40 1.80 0.055 0.071 e 0.95 BSC e1 1.90 BSC 0.037 BSC 0.075 BSC L 0.30 0.60 0 0° 8° 0.012 0° 0.024 8° Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. 6