UI(D)4N60 N-Ch 600V Fast Switching MOSFETs General Description Product Summery The UI(D)4N60 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UI(D)4N60 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 600V 2.25 Ω 3.2A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch TO-251/TO-252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol VDSS ID Parameter TO-251/TO-252 Unites 600 V –Continuous(TC = 25℃) 3.2 A –Continuous(TC = 100℃) 1.9 A 12.8 A ±30 V Drain-Source Voltage Drain Current –Pulsed IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 63 mJ dv/dt Peak Diode Recovery dv/dt (Note3) 4.5 V/ns 57 W 0.45 W/℃ -55 to + 150 ℃ 300 ℃ PD TJ1 TSTG TL (Note1) Power Dissipation (TC = 25℃) -Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Data Symbol Parameter Typ Max Units Rθ JC Thermal Resistance, Junction-to-Case -- 2.2 ℃/W Rθ JA Thermal Resistance, Junction-to-Ambient -- 50 ℃/W 1 UI(D)4N60 N-Ch 600V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units 600 -- -- V Off Characteristics BVDSS ΔBVDSS/ ΔTJ IDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250μA Breakdown Coefficient ID = 250μ A, Referenced to 25℃ -- 0.6 -- V/℃ VDS = 600 V, VGS = 0 V (TC = 25℃) -- -- 10 μA VDS = 480 V, VGS = 0 V (TC = 125℃) -- -- 100 μA VGS = 30 V, VDS = 0 V -- -- 100 nA VGS = -30 V, VDS = 0 V -- -- -100 nA 2.5 3.5 4.5 V -- 2.25 2.81 Ω -- 2.6 -- S ---- 500 53.2 7.0 650 69 9.1 pF pF pF -------- 11 20 30 19 14.5 3.4 7.0 27 48 72 46 20 --- ns ns ns ns nC nC nC ------ --1.13 561 0.8 3.2 12.8 1.4 --- A Voltage Temperature Zero Gate Voltage Drain Current IGSSF Gate-Body Forward Leakage Current, IGSSR Gate-Body Reverse Leakage Current, On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Static Drain-Source On-resistance VGS = 10 V, ID = 1.6A gFS Forward Transconductance VDS = 10 V, ID = 1.6 A (Note 4) Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHZ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 300 V, ID = 3.2A, RG = 25 Ω (Note 4, 5) Turn-Off Fall Time Total Gate Charge Gate-Source Charge VDS = 480 V, ID = 3.2A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.2A Reverse Recovery Time VGS= 0 V,IS = 3.2A, dIF/dt = 100 A/μ s Reverse Recovery Charge Notes: 1. Repetitive Rating：Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 3.4A, VDD = 50V, RG =25Ω, Starting TJ = 25℃ 3. ISD ≤ 3.2A, di/dt ≤ 200A/μS, VDD ≤ BVDSS, Starting TJ = 25℃ 4. Pulse Test：Pulse width ≤ 300μS, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2 (Note 4) A V ns μ C UI(D)4N60 N-Ch 600V Fast Switching MOSFETs Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 3 UI(D)4N60 N-Ch 600V Fast Switching MOSFETs Peak Diode Recovery dv/dt Test Circuit & Waveforms