万和兴电子有限公司 www.whxpcb.com AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. VDS ID (at VGS= -20V) -30V -70A RDS(ON) (at VGS= -20V) < 6.2mΩ (< 6.7mΩ∗) RDS(ON) (at VGS = -10V) < 8mΩ (< 8.5mΩ∗) 100% UIS Tested 100% Rg Tested TO252 DPAK Top View TO251A IPAK Bottom View D Bottom View Top View D D S G G G S Gate-Source Voltage VGS TC=25°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State A IAS, IAR -50 A EAS, EAR 125 mJ 90 W 45 2.5 RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s A -12 PDSM TA=70°C V -15 PD TC=100°C ±25 -200 IDSM TA=70°C Units V -55 IDM TA=25°C Continuous Drain Current Maximum -30 -70 ID TC=100°C S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G D D S G -55 to 175 Typ 16 41 0.9 °C Max 20 50 1.6 Units °C/W °C/W °C/W * package TO251A Rev.9.0: July 2013 www.aosmd.com Page 1 of 6 AOD403/AOI403 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 Typ Max V VDS=-30V, VGS=0V -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -200 Units µA ±100 nA -2.5 -3.5 V 5.1 6.2 7.6 9.2 6.2 8 mΩ VGS=-20V, ID=-20A TO251A 5.6 6.7 mΩ VGS=-10V, ID=-20A TO251A 6.7 8.5 mΩ Forward Transconductance VDS=-5V, ID=-20A 42 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG VGS=-20V, ID=-20A TO252 VGS=-10V, ID=-20A TO252 RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=-10V, VDS=-15V, ID=-20A A -0.7 mΩ S -1 V -70 A 2310 2890 3500 pF 410 585 760 pF 280 470 660 pF 1.9 3.8 5.7 Ω 40 51 61 nC 10 12 14 nC 16 22 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 14 18 22 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 9 11 13 10 VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω 16 ns 12 ns 45 ns 22 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.9.0: July 2013 www.aosmd.com Page 2 of 6 AOD403/AOI403 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 -10V VDS=-5V -6V 80 80 -5V 60 -ID(A) -ID (A) 60 40 125°C 40 -4.5V 25°C 20 20 VGS=-4V 0 0 0 1 2 3 4 1.5 3 3.5 4 4.5 5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance RDS(ON) (mΩ Ω) 2.5 6 1.8 8 VGS=-10V 6 4 VGS=-20V 2 VGS=-20V ID=-20A 1.6 1.4 17 5 2 VGS=-10V 10 1.2 ID=-20A 1 0.8 0 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 20 1.0E+02 ID=-20A 1.0E+01 40 15 1.0E+00 125°C 125°C -IS (A) RDS(ON) (mΩ Ω) 2 10 5 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 1.0E-04 0 1.0E-05 0 10 15 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.9.0: July 2013 5 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD403/AOI403 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=-15V ID=-20A 8 4000 Capacitance (pF) -VGS (Volts) Ciss 6 4 3000 2000 Coss 2 1000 0 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 60 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 400 1000.0 10µs RDS(ON) limited 10.0 DC 320 10µs 1ms 10ms 1.0 240 160 TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 100µs Power (W) 100.0 -ID (Amps) Crss 80 0.0 0 0.01 0.1 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.6°C/W 40 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.9.0: July 2013 www.aosmd.com Page 4 of 6 AOD403/AOI403 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 TA=25°C TA=100°C 100.0 TA=150°C Power Dissipation (W) -IAR (A) Peak Avalanche Current 1000.0 120 90 60 30 TA=125°C 0 10.0 1 10 100 0 1000 25 50 75 100 175 10000 80 70 TA=25°C 1000 60 Power (W) Current rating ID(A) 150 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (ms) Figure 12: Single Pulse Avalanche capability (Note C) 50 40 30 100 10 20 10 1 0 0.00001 0 10 Zθ JA Normalized Transient Thermal Resistance 125 1 25 50 75 100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.1 10 1000 0 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to18 Ambient (Note H) 175 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.9.0: July 2013 www.aosmd.com Page 5 of 6 AOD403/AOI403 万和兴电子有限公司 www.whxpcb.com Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.9.0: July 2013 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6